| Wide-bandgap solid-state circuit breakers for DC power systems: Device and circuit considerations ZJ Shen, G Sabui, Z Miao, Z Shuai IEEE Transactions on Electron Devices 62 (2), 294-300, 2015 | 200 | 2015 |
| Design and analysis of DC solid-state circuit breakers using SiC JFETs Z Miao, G Sabui, AM Roshandeh, ZJ Shen IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 863-873, 2016 | 121 | 2016 |
| A self-powered ultra-fast DC solid state circuit breaker using a normally-on SiC JFET Z Miao, G Sabui, A Chen, Y Li, ZJ Shen, J Wang, Z Shuai, A Luo, X Yin, ... 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 767-773, 2015 | 85 | 2015 |
| Modeling and simulation of bulk gallium nitride power semiconductor devices G Sabui, PJ Parbrook, M Arredondo-Arechavala, ZJ Shen Aip Advances 6 (5), 2016 | 71 | 2016 |
| A self-powered bidirectional DC solid state circuit breaker using two normally-on SiC JFETs Z Miao, G Sabui, A Moradkhani, J Wang, Z Shuai, X Yin 2015 IEEE energy conversion congress and exposition (ECCE), 4119-4124, 2015 | 37 | 2015 |
| Ultrafast autonomous solid state circuit breakers for shipboard DC power distribution ZJ Shen, AM Roshandeh, Z Miao, G Sabui 2015 IEEE Electric Ship Technologies Symposium (ESTS), 299-305, 2015 | 35 | 2015 |
| Gan nanowire Schottky barrier diodes G Sabui, VZ Zubialevich, M White, P Pampili, PJ Parbrook, M McLaren, ... IEEE Transactions on Electron Devices 64 (5), 2283-2290, 2017 | 22 | 2017 |
| Analytical calculation of breakdown voltage for dielectric RESURF power devices G Sabui, ZJ Shen IEEE Electron Device Letters 38 (6), 767-770, 2017 | 14 | 2017 |
| 3-D TCAD simulation to optimize the trench termination design for higher and robust BVdss Z Hossain, G Sabui, J Sellers, B Pratt, A Salih 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 12 | 2016 |
| Simulation study of high voltage vertical GaN nanowire field effect transistors G Sabui, VZ Zubialevich, P Pampili, M White, PJ Parbrook, M McLaren, ... ECS Transactions 80 (7), 69, 2017 | 8 | 2017 |
| Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography VZ Zubialevich, P Pampili, M McLaren, M Arredondo-Arechavala, G Sabui, ... 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-3, 2018 | 5 | 2018 |
| Dielectric RESURF as an alternative to shield RESURF for an improved and easy-to-manufacture low voltage trench MOSFETs Z Hossain, G Sabui, ZJ Shen 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 4 | 2017 |
| On the feasibility of further improving Figure of Merits (FOM) of low voltage power MOSFETs G Sabui, ZJ Shen 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 3 | 2014 |
| Zener diodes and methods of manufacture G Sabui, C Yupeng, U Sharma US Patent App. 16/249,553, 2020 | | 2020 |
| Design considerations of vertical GaN nanowire Schottky barrier diodes G Sabui, VZ Zubialevich, M White, P Pampili, PJ Parbrook, M McLaren, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | | 2017 |
| Gallium Nitride Nanostructured Power Semiconductor Devices G Sabui Illinois Institute of Technology, 2017 | | 2017 |
John ShenSimon Fraser University在 sfu.ca 的电子邮件经过验证
