Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors S Ghatak, AN Pal, A Ghosh ACS nano 5 (10), 7707-7712, 2011 | 975 | 2011 |
Ultralow noise field-effect transistor from multilayer graphene AN Pal, A Ghosh Applied Physics Letters 95 (8), 2009 | 155 | 2009 |
Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion AN Pal, S Ghatak, V Kochat, ES Sneha, A Sampathkumar, S Raghavan, ... ACS nano 5 (3), 2075-2081, 2011 | 121 | 2011 |
Resistance noise in electrically biased bilayer graphene AN Pal, A Ghosh Physical Review Letters 102 (12), 126805, 2009 | 98 | 2009 |
High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy V Kochat, A Nath Pal, ES Sneha, A Sampathkumar, A Gairola, ... Journal of Applied Physics 110 (1), 2011 | 82 | 2011 |
Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime F Nichele, AN Pal, P Pietsch, T Ihn, K Ensslin, C Charpentier, ... Phys. Rev. Lett. 112, 036802, 2014 | 71 | 2014 |
Nonlocal transport via edge states in InAs/GaSb coupled quantum wells S Mueller, AN Pal, M Karalic, T Tschirky, C Charpentier, W Wegscheider, ... Physical Review B 92 (8), 081303, 2015 | 70 | 2015 |
Nonmagnetic single-molecule spin-filter based on quantum interference AN Pal, D Li, S Sarkar, S Chakrabarti, A Vilan, L Kronik, A Smogunov, ... Nature communications 10 (1), 5565, 2019 | 66 | 2019 |
Direct observation of valley hybridization and universal symmetry of graphene with mesoscopic conductance fluctuations AN Pal, V Kochat, A Ghosh Physical Review Letters 109 (19), 196601, 2012 | 56 | 2012 |
Large low-frequency resistance noise in chemical vapor deposited graphene AN Pal, AA Bol, A Ghosh Applied Physics Letters 97 (13), 2010 | 52 | 2010 |
Spin-orbit splitting and effective masses in -type GaAs two-dimensional hole gases F Nichele, AN Pal, R Winkler, C Gerl, W Wegscheider, T Ihn, K Ensslin Physical Review B 89 (8), 081306, 2014 | 43 | 2014 |
Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells C Charpentier, S Fält, C Reichl, F Nichele, A Nath Pal, P Pietsch, T Ihn, ... Applied Physics Letters 103 (11), 2013 | 39 | 2013 |
High-Responsivity Gate-Tunable Ultraviolet–Visible Broadband Phototransistor Based on Graphene–WS2 Mixed-Dimensional (2D-0D) Heterostructure S Mukherjee, D Bhattacharya, S Patra, S Paul, RK Mitra, P Mahadevan, ... ACS Applied Materials & Interfaces 14 (4), 5775-5784, 2022 | 28 | 2022 |
Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices AN Pal, S Müller, T Ihn, K Ensslin, T Tschirky, C Charpentier, ... AIP Advances 5 (7), 2015 | 21 | 2015 |
High-Performance Broad-Band Photodetection Based on Graphene–MoS2xSe2(1–x) Alloy Engineered Phototransistors S Mukherjee, D Bhattacharya, SK Ray, AN Pal ACS Applied Materials & Interfaces 14 (30), 34875-34883, 2022 | 16 | 2022 |
Origin of 1/f noise in graphene produced for large‐scale applications in electronics V Kochat, A Sahoo, AN Pal, S Eashwer, G Ramalingam, A Sampathkumar, ... IET Circuits, Devices & Systems 9 (1), 52-58, 2015 | 13 | 2015 |
Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity P Karnatak, S Goswami, V Kochat, A Nath Pal, A Ghosh Physical review letters 113 (2), 026601, 2014 | 13 | 2014 |
Unravelling the nature of spin reorientation transition in quasi-2D vdW magnetic material, Fe4GeTe2 S Bera, SK Pradhan, MS Khan, R Pal, B Pal, S Kalimuddin, A Bera, B Das, ... Journal of Magnetism and Magnetic Materials 565, 170257, 2023 | 10 | 2023 |
Two‐Dimensional MoxW1−xS2 Alloys for Nanogenerators Producing Record Piezo‐Output and Coupled Photodetectors for Self‐Powered UV Sensor D Bhattacharya, S Mukherjee, AN Pal, RK Mitra, SK Ray Advanced Optical Materials 10 (15), 2200353, 2022 | 9 | 2022 |
Probing metal-molecule contact at the atomic scale via conductance jumps B Pabi, D Mondal, P Mahadevan, AN Pal Physical Review B 104 (12), L121407, 2021 | 7 | 2021 |