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Tadas Malinauskas
Tadas Malinauskas
Vilnius University, Institute of Photonics and Nanotechnology
在 ff.vu.lt 的电子邮件经过验证 - 首页
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引用次数
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年份
Recombination of free and bound excitons in GaN
B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina, ...
physica status solidi (b) 245 (9), 1723-1740, 2008
1452008
Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers
R Aleksiejūnas, M Sūdžius, T Malinauskas, J Vaitkus, K Jarašiūnas, ...
Applied physics letters 83 (6), 1157-1159, 2003
972003
Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques
T Malinauskas, K Jarašiūnas, S Miasojedovas, S Juršėnas, B Beaumont, ...
Applied physics letters 88 (20), 2006
622006
Optical evaluation of carrier lifetime and diffusion length in synthetic diamonds
T Malinauskas, K Jarasiunas, E Ivakin, V Ralchenko, A Gontar, ...
Diamond and Related Materials 17 (7-10), 1212-1215, 2008
572008
All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE-grown GaN
T Malinauskas, R Aleksiejūnas, K Jarašiūnas, B Beaumont, P Gibart, ...
Journal of crystal growth 300 (1), 223-227, 2007
532007
Solar water splitting: efficiency discussion
J Juodkazytė, G Seniutinas, B Šebeka, I Savickaja, T Malinauskas, ...
International Journal of Hydrogen Energy 41 (28), 11941-11948, 2016
502016
Transient photoluminescence of shallow donor bound excitons in GaN
B Monemar, PP Paskov, JP Bergman, G Pozina, AA Toropov, TV Shubina, ...
Physical Review B—Condensed Matter and Materials Physics 82 (23), 235202, 2010
502010
Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers
T Malinauskas, K Jarašiūnas, R Aleksiejunas, D Gogova, B Monemar, ...
physica status solidi (b) 243 (7), 1426-1430, 2006
502006
The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique
K Neimontas, T Malinauskas, R Aleksiejūnas, M Sūdžius, K Jarašiūnas, ...
Semiconductor science and technology 21 (7), 952, 2006
412006
Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers
K Jarasiunas, R Aleksiejunas, T Malinauskas, V Gudelis, T Tamulevicius, ...
Review of Scientific Instruments 78 (3), 2007
402007
Structural defect-related emissions in nonpolar a-plane GaN
PP Paskov, R Schifano, T Paskova, T Malinauskas, JP Bergman, ...
Physica B: Condensed Matter 376, 473-476, 2006
392006
Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique
R Aleksiejūnas, M Sūdžius, V Gudelis, T Malinauskas, K Jarašiūnas, ...
physica status solidi (c), 2686-2690, 2003
352003
Diffusion and recombination of degenerate carrier plasma in GaN
T Malinauskas, K Jarasiunas, M Heuken, F Scholz, P Brückner
physica status solidi c 6 (S2 2), S743-S746, 2009
342009
InxGa1− xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions
J Juodkazytė, B Šebeka, I Savickaja, A Kadys, E Jelmakas, T Grinys, ...
Solar energy materials and solar cells 130, 36-41, 2014
332014
Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique
T Malinauskas, K Jarašiūnas, E Ivakin, N Tranchant, M Nesladek
physica status solidi (a) 207 (9), 2058-2063, 2010
332010
Remote epitaxy of GaN via graphene on GaN/sapphire templates
K Badokas, A Kadys, J Mickevičius, I Ignatjev, M Skapas, S Stanionytė, ...
Journal of Physics D: Applied Physics 54 (20), 205103, 2021
302021
Optical and structural properties of BGaN layers grown on different substrates
A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ...
Journal of Physics D: Applied Physics 48 (46), 465307, 2015
302015
Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ...
Applied Surface Science 427, 1027-1032, 2018
282018
Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements
I Reklaitis, F Nippert, R Kudžma, T Malinauskas, S Karpov, I Pietzonka, ...
Journal of Applied Physics 121 (3), 2017
282017
Morphological and optical property study of Li doped ZnO produced by microwave-assisted solvothermal synthesis
P Ščajev, R Durena, P Onufrijevs, S Miasojedovas, T Malinauskas, ...
Materials Science in Semiconductor Processing 135, 106069, 2021
232021
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