| Strain relief by periodic misfit arrays for low defect density GaSb on GaAs SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ... Applied physics letters 88 (13), 2006 | 307 | 2006 |
| Optically pumped frequency reconfigurable antenna design Y Tawk, AR Albrecht, S Hemmady, G Balakrishnan, CG Christodoulou IEEE antennas and wireless propagation letters 9, 280-283, 2010 | 171 | 2010 |
| Light-emitting metasurfaces: simultaneous control of spontaneous emission and far-field radiation S Liu, A Vaskin, S Addamane, B Leung, MC Tsai, Y Yang, ... Nano letters 18 (11), 6906-6914, 2018 | 159 | 2018 |
| Demonstration of a cognitive radio front end using an optically pumped reconfigurable antenna system (OPRAS) Y Tawk, J Costantine, S Hemmady, G Balakrishnan, K Avery, ... IEEE Transactions on Antennas and Propagation 60 (2), 1075-1083, 2011 | 134 | 2011 |
| Interfacial misfit array formation for GaSb growth on GaAs S Huang, G Balakrishnan, DL Huffaker Journal of Applied Physics 105 (10), 2009 | 131 | 2009 |
| III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ... Applied physics letters 89 (16), 2006 | 114 | 2006 |
| wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer G Balakrishnan, S Huang, TJ Rotter, A Stintz, LR Dawson, KJ Malloy, ... Applied physics letters 84 (12), 2058-2060, 2004 | 109 | 2004 |
| Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces PE Hopkins, JC Duda, SP Clark, CP Hains, TJ Rotter, LM Phinney, ... Applied Physics Letters 98 (16), 2011 | 94 | 2011 |
| Growth mechanisms of highly mismatched AlSb on a Si substrate G Balakrishnan, S Huang, LR Dawson, YC Xin, P Conlin, DL Huffaker Applied Physics Letters 86 (3), 2005 | 94 | 2005 |
| Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials A Jallipalli, G Balakrishnan, SH Huang, A Khoshakhlagh, LR Dawson, ... Journal of Crystal Growth 303 (2), 449-455, 2007 | 89 | 2007 |
| Single-mode lasing of GaN nanowire-pairs H Xu, JB Wright, TS Luk, JJ Figiel, K Cross, LF Lester, G Balakrishnan, ... Applied Physics Letters 101 (11), 2012 | 87 | 2012 |
| Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ... Semiconductor Science and Technology 25 (8), 085010, 2010 | 87 | 2010 |
| Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate SH Huang, G Balakrishnan, A Khoshakhlagh, LR Dawson, DL Huffaker Applied Physics Letters 93 (7), 2008 | 84 | 2008 |
| Self-organized formation of GaSb/GaAs quantum rings R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ... Physical review letters 101 (25), 256101, 2008 | 81 | 2008 |
| Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ... Applied Physics Letters 90 (26), 2007 | 71 | 2007 |
| Selective area growth of InAs quantum dots formed on a patterned GaAs substrate S Birudavolu, N Nuntawong, G Balakrishnan, YC Xin, S Huang, SC Lee, ... Applied physics letters 85 (12), 2337-2339, 2004 | 66 | 2004 |
| Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker Applied Physics Letters 90 (18), 2007 | 65 | 2007 |
| Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90 misfit dislocations A Jallipalli, G Balakrishnan, SH Huang, TJ Rotter, K Nunna, BL Liang, ... Nanoscale research letters 4, 1458-1462, 2009 | 64 | 2009 |
| Formation and optical characteristics of strain-relieved and densely stacked GaSb∕ GaAs quantum dots J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ... Applied Physics Letters 89 (20), 2006 | 62 | 2006 |
| Room-temperature optically pumped (Al) GaSb vertical-cavity surface-emitting laser monolithically grown on an Si (1 0 0) substrate G Balakrishnan, A Jallipalli, P Rotella, S Huang, A Khoshakhlagh, ... IEEE Journal of Selected Topics in Quantum Electronics 12 (6), 1636-1641, 2006 | 61 | 2006 |
L. Ralph DawsonResearch Professor of ECE, University of New Mexico在 chtm.unm.edu 的电子邮件经过验证
