| Lateral 1.8 kV -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit K Tetzner, EB Treidel, O Hilt, A Popp, SB Anooz, G Wagner, A Thies, ... IEEE Electron Device Letters 40 (9), 1503-1506, 2019 | 133 | 2019 |
| Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ... Apl Materials 7 (2), 2019 | 107 | 2019 |
| Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ... Applied Physics Letters 116 (18), 2020 | 81 | 2020 |
| Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ... Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2021 | 59 | 2021 |
| Effect of metal contacts on (100) β-Ga2O3 Schottky barriers LAM Lyle, K Jiang, EV Favela, K Das, A Popp, Z Galazka, G Wagner, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 51 | 2021 |
| Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ... Applied Physics Express 12 (12), 126501, 2019 | 47 | 2019 |
| Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ... Journal of Physics D: Applied Physics 54 (3), 034003, 2020 | 43 | 2020 |
| Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, S Ganschow, P Seyidov, K Irmscher, M Pietsch, TS Chou, ... Applied Physics Letters 120 (15), 2022 | 42 | 2022 |
| Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices K Tetzner, O Hilt, A Popp, SB Anooz, J Würfl Microelectronics Reliability 114, 113951, 2020 | 36 | 2020 |
| Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, TTV Tran, K Irmscher, ... AIP Advances 11 (11), 2021 | 35 | 2021 |
| Self-Heating Characterization of -Ga2O3 Thin-Channel MOSFETs by Pulsed – and Raman Nanothermography NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ... IEEE Transactions on Electron Devices 67 (1), 204-211, 2019 | 29 | 2019 |
| Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts MH Lee, TS Chou, S Bin Anooz, Z Galazka, A Popp, RL Peterson ACS nano 16 (8), 11988-11997, 2022 | 28 | 2022 |
| Electrical properties of (100) β-Ga2O3 Schottky diodes with four different metals K Jiang, LAM Lyle, E Favela, D Moody, T Lin, KK Das, A Popp, Z Galazka, ... ECS Transactions 92 (7), 71, 2019 | 26 | 2019 |
| Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy S Bin Anooz, A Popp, R Grüneberg, C Wouters, R Schewski, ... Journal of Applied Physics 125 (19), 2019 | 20 | 2019 |
| SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes K Tetzner, K Egbo, M Klupsch, RS Unger, A Popp, TS Chou, SB Anooz, ... Applied Physics Letters 120 (11), 2022 | 19 | 2022 |
| APL Mater. 7, 022515 (2019) R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ... | 18 | |
| Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films TS Chou, S Bin Anooz, R Grüneberg, N Dropka, J Rehm, TTV Tran, ... Applied Physics Letters 121 (3), 2022 | 13 | 2022 |
| 500° C operation of β-Ga2O3 field-effect transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, DM Dryden, J Williams, H Lee, ... Applied Physics Letters 121 (24), 2022 | 12 | 2022 |
| Epitaxial growth of CuGaSe2 thin-films by MBE—Influence of the Cu/Ga ratio A Popp, C Pettenkofer Applied Surface Science 416, 815-823, 2017 | 12 | 2017 |
| High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression TS Chou, P Seyidov, SB Anooz, R Grüneberg, J Rehm, TTV Tran, ... Japanese Journal of Applied Physics 62 (SF), SF1004, 2023 | 11 | 2023 |
Saud Bin AnoozPh.D在 ikz-berlin.de 的电子邮件经过验证
