| Lateral 1.8 kV -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit K Tetzner, EB Treidel, O Hilt, A Popp, SB Anooz, G Wagner, A Thies, ... IEEE Electron Device Letters 40 (9), 1503-1506, 2019 | 136 | 2019 |
| Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ... Apl Materials 7 (2), 2019 | 112 | 2019 |
| Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ... Applied Physics Letters 116 (18), 2020 | 86 | 2020 |
| Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ... Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2021 | 61 | 2021 |
| Effect of metal contacts on (100) β-Ga2O3 Schottky barriers LAM Lyle, K Jiang, EV Favela, K Das, A Popp, Z Galazka, G Wagner, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 53 | 2021 |
| Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ... Applied Physics Express 12 (12), 126501, 2019 | 50 | 2019 |
| Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ... Journal of Physics D: Applied Physics 54 (3), 034003, 2020 | 46 | 2020 |
| Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, S Ganschow, P Seyidov, K Irmscher, M Pietsch, TS Chou, ... Applied Physics Letters 120 (15), 2022 | 45 | 2022 |
| Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, TTV Tran, K Irmscher, ... AIP Advances 11 (11), 2021 | 37 | 2021 |
| Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices K Tetzner, O Hilt, A Popp, SB Anooz, J Würfl Microelectronics Reliability 114, 113951, 2020 | 37 | 2020 |
| Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts MH Lee, TS Chou, S Bin Anooz, Z Galazka, A Popp, RL Peterson ACS nano 16 (8), 11988-11997, 2022 | 31 | 2022 |
| Self-Heating Characterization of -Ga2O3 Thin-Channel MOSFETs by Pulsed – and Raman Nanothermography NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ... IEEE Transactions on Electron Devices 67 (1), 204-211, 2019 | 30 | 2019 |
| Electrical properties of (100) β-Ga2O3 Schottky diodes with four different metals K Jiang, LAM Lyle, E Favela, D Moody, T Lin, KK Das, A Popp, Z Galazka, ... ECS Transactions 92 (7), 71, 2019 | 26 | 2019 |
| SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes K Tetzner, K Egbo, M Klupsch, RS Unger, A Popp, TS Chou, SB Anooz, ... Applied Physics Letters 120 (11), 2022 | 24 | 2022 |
| Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy S Bin Anooz, A Popp, R Grüneberg, C Wouters, R Schewski, ... Journal of Applied Physics 125 (19), 2019 | 20 | 2019 |
| Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films TS Chou, S Bin Anooz, R Grüneberg, N Dropka, J Rehm, TTV Tran, ... Applied Physics Letters 121 (3), 2022 | 17 | 2022 |
| Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, M Pietsch, J Rehm, ... Applied Physics Letters 122 (5), 2023 | 14 | 2023 |
| Kinetic Monte Carlo model for homoepitaxial growth of W Miller, D Meiling, R Schewski, A Popp, SB Anooz, M Albrecht Physical Review Research 2 (3), 033170, 2020 | 14 | 2020 |
| High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression TS Chou, P Seyidov, SB Anooz, R Grüneberg, J Rehm, TTV Tran, ... Japanese Journal of Applied Physics 62 (SF), SF1004, 2023 | 13 | 2023 |
| Bulk single crystals and physical properties of β-(AlxGa1− x) 2O3 (x= 0–0.35) grown by the Czochralski method Z Galazka, A Fiedler, A Popp, S Ganschow, A Kwasniewski, P Seyidov, ... Journal of Applied Physics 133 (3), 2023 | 13 | 2023 |
Saud Bin AnoozPh.D在 ikz-berlin.de 的电子邮件经过验证
