| Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer O Axelsson, S Gustafsson, H Hjelmgren, N Rorsman, H Blanck, ... IEEE Transactions on Electron Devices 63 (1), 326-332, 2015 | 73 | 2015 |
| Impact of trapping effects on the recovery time of GaN based low noise amplifiers O Axelsson, N Billström, N Rorsman, M Thorsell IEEE Microwave and wireless components letters 26 (1), 31-33, 2015 | 33 | 2015 |
| Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition T Huang, A Malmros, J Bergsten, S Gustafsson, O Axelsson, M Thorsell, ... IEEE Electron Device Letters 36 (6), 537-539, 2015 | 32 | 2015 |
| The effect of forward gate bias stress on the noise performance of mesa isolated GaN HEMTs O Axelsson, M Thorsell, K Andersson, N Rorsman IEEE Transactions on Device and Materials Reliability 15 (1), 40-46, 2014 | 15 | 2014 |
| Fabrication and Characterization of Thin-BarrierHEMTs JG Felbinger, M Fagerlind, O Axelsson, N Rorsman, X Gao, S Guo, ... IEEE electron device letters 32 (7), 889-891, 2011 | 13 | 2011 |
| Impact of AlGaN/GaN interface and passivation on the robustness of low-noise amplifiers T Huang, O Axelsson, J Bergsten, M Thorsell, N Rorsman IEEE Transactions on Electron Devices 67 (6), 2297-2303, 2020 | 11 | 2020 |
| Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation T Huang, O Axelsson, TNT Do, M Thorsell, D Kuylenstierna, N Rorsman IEEE Transactions on Electron Devices 63 (10), 3887-3892, 2016 | 9 | 2016 |
| Achieving low-recovery time in algan/gan hemts with aln interlayer under low-noise amplifiers operation T Huang, O Axelsson, J Bergsten, M Thorsell, N Rorsman IEEE Electron Device Letters 38 (7), 926-928, 2017 | 8 | 2017 |
| Highly linear gallium nitride MMIC LNAs O Axelsson, K Andersson 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2012 | 7 | 2012 |
| Low-pressure-chemical-vapor-deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application T Huang, O Axelsson, A Malmros, J Bergsten, S Gustafsson, M Thorsell, ... 2015 Asia-Pacific Microwave Conference (APMC) 3, 1-3, 2015 | 3 | 2015 |
| Design and characterization of a highly linear 3 GHz GaN HEMT amplifier P Chehrenegar, O Axelsson, J Grahn, N Rorsman, JG Felbinger, ... 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits …, 2011 | 2 | 2011 |
| Noise temperature of an electronic tuner for noise parameter measurement systems O Axelsson, M Thorsell, K Andersson, J Stenarson, Y Rolain 79th ARFTG Microwave Measurement Conference, 1-2, 2012 | 1 | 2012 |
| 2015 Index IEEE Transactions on Device and Materials Reliability Vol. 15 MA Alam, A Alkhazali, FA Altolaguirre, Z An, MG Ancona, K Andersson, ... IEEE Transactions on Device and Materials Reliability 15 (4), 641, 2015 | | 2015 |
| Gallium Nitride Low Noise Amplifiers for Highly Linear and Robust Microwave Receivers O Axelsson Department of Microtechnology and Nanoscience, Chalmers University of Technology, 2013 | | 2013 |
| Foreword to the Special Section on ‘‘Design for Reliability and Yield for Ultimate CMOS Technologies’’......... 2 S Das, DM Bull, PN Whatmough, TK Chiang, O Axelsson, M Thorsell, ... | | |
