| 30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique Y Zhao, J Sonoda, CC Pan, S Brinkley, I Koslow, K Fujito, H Ohta, ... Applied physics express 3 (10), 102101, 2010 | 98 | 2010 |
| Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes H Masui, J Sonoda, N Pfaff, I Koslow, S Nakamura, SP DenBaars Journal of Physics D: Applied Physics 41 (16), 165105, 2008 | 82 | 2008 |
| 444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ... Applied Physics Letters 100 (2), 2012 | 76 | 2012 |
| Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ... Applied Physics Letters 101 (12), 2012 | 63 | 2012 |
| Trace analysis of non-basal plane misfit stress relaxation in (202¯ 1) and (303¯ 1¯) semipolar InGaN/GaN heterostructures MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ... Applied Physics Letters 100 (20), 2012 | 50 | 2012 |
| Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar quantum wells C Mounir, UT Schwarz, IL Koslow, M Kneissl, T Wernicke, T Schimpke, ... Physical Review B 93 (23), 235314, 2016 | 35 | 2016 |
| Electroluminescence characterization of (2021) InGaN/GaN light emitting diodes with various wavelengths RB Chung, YD Lin, I Koslow, N Pfaff, H Ohta, J Ha, SP DenBaars, ... Japanese Journal of Applied Physics 49 (7R), 070203, 2010 | 35 | 2010 |
| Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures F Wu, EC Young, I Koslow, MT Hardy, PS Hsu, AE Romanov, S Nakamura, ... Applied Physics Letters 99 (25), 2011 | 34 | 2011 |
| Impact of electron irradiation on electron holographic potentiometry JB Park, T Niermann, D Berger, A Knauer, I Koslow, M Weyers, M Kneissl, ... Applied Physics Letters 105 (9), 2014 | 31 | 2014 |
| Droop improvement in high current range on PSS-LEDs S Tanaka, Y Zhao, I Koslow, CC Pan, HT Chen, J Sonoda, SP DenBaars, ... Electronics letters 47 (5), 335-336, 2011 | 29 | 2011 |
| High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution DB Thompson, JJ Richardson, I Koslow, JS Ha, FF Lange, SP DenBaars, ... US Patent 8,637,334, 2014 | 27 | 2014 |
| Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays JJ Richardson, DB Thompson, I Koslow, JS Ha, FF Lange, SP DenBaars, ... US Patent 8,536,618, 2013 | 27 | 2013 |
| Optimization of device structures for bright blue semipolar (1011) light emitting diodes via metalorganic chemical vapor deposition Y Zhao, J Sonada, I Koslow, CC Pan, H Ohta, JS Ha, SP DenBaars, ... Japanese Journal of Applied Physics 49 (7R), 070206, 2010 | 24 | 2010 |
| Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes CC Pan, I Koslow, J Sonoda, H Ohta, JS Ha, S Nakamura, SP DenBaars Japanese journal of applied physics 49 (8R), 080210, 2010 | 21 | 2010 |
| Preparation and structure of ultra-thin GaN (0001) layers on In0. 11Ga0. 89N-single quantum wells S Alamé, AN Quezada, D Skuridina, C Reich, D Henning, M Frentrup, ... Materials Science in Semiconductor Processing 55, 7-11, 2016 | 18 | 2016 |
| High power and high efficiency blue InGaN Light emitting diodes on free-standing semipolar (3031) bulk GaN substrate IL Koslow, J Sonoda, RB Chung, CC Pan, S Brinkley, H Ohta, ... Japanese journal of applied physics 49 (8R), 080203, 2010 | 18 | 2010 |
| Onset of plastic relaxation in semipolar (112¯ 2) InxGa1− xN/GaN heterostructures IL Koslow, MT Hardy, PS Hsu, F Wu, AE Romanov, EC Young, ... Journal of Crystal Growth 388, 48-53, 2014 | 17 | 2014 |
| Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements M Rychetsky, I Koslow, B Avinc, J Rass, T Wernicke, K Bellmann, ... Journal of Applied Physics 119 (9), 2016 | 15 | 2016 |
| Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯ 1) InGaN/GaN heterostructures MT Hardy, EC Young, P Shan Hsu, DA Haeger, IL Koslow, S Nakamura, ... Applied Physics Letters 101 (13), 2012 | 14 | 2012 |
| Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes JJ Richardson, I Koslow, CC Pan, Y Zhao, JS Ha, SP DenBaars Applied Physics Express 4 (12), 126502, 2011 | 12 | 2011 |
