Submicron scaling of HBTs MJW Rodwell, M Urteaga, T Mathew, D Scott, D Mensa, Q Lee, J Guthrie, ... IEEE Transactions on Electron Devices 48 (11), 2606-2624, 2001 | 239 | 2001 |
G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers VK Paidi, Z Griffith, Y Wei, M Dahlstrom, M Urteaga, N Parthasarathy, ... IEEE Transactions on Microwave Theory and Techniques 53 (2), 598-605, 2005 | 76 | 2005 |
InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub/spl tau//and 505-GHz f/sub max Z Griffith, M Dahlstrom, MJW Rodwell, XM Fang, D Lubyshev, Y Wu, ... IEEE Electron Device Letters 26 (1), 11-13, 2004 | 46 | 2004 |
Thermal limitations of InP HBTs in 80-and 160-gb ICs I Harrison, M Dahlstrom, S Krishnan, Z Griffith, YM Kim, MJW Rodwell IEEE Transactions on Electron Devices 51 (4), 529-534, 2004 | 46 | 2004 |
Wideband DHBTs using a graded carbon-doped InGaAs base M Dahlstrom, XM Fang, D Lubyshev, M Urteaga, S Krishnan, ... IEEE Electron Device Letters 24 (7), 433-435, 2003 | 43 | 2003 |
High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates YM Kim, M Dahlstrom, S Lee, AJW Rodwell, AC Gossard IEEE Electron Device Letters 23 (6), 297-299, 2002 | 43 | 2002 |
Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax= 425 GHz S Lee, HJ Kim, M Urteaga, S Krishnan, Y Wei, M Dahlstrom, M Rodwell ELECTRONICS LETTERS-IEE 37 (17), 1096-1097, 2001 | 37 | 2001 |
A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications BA Orner, M Dahlstrom, A Pothiawala, RM Rassel, Q Liu, H Ding, ... 2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006 | 35 | 2006 |
InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and fmaxand low C/sub cb//I/sub c/ ratio Z Griffith, M Dahlstrom, M Urteaga, MJW Rodwell, XM Fang, D Lubyshev, ... IEEE Electron Device Letters 25 (5), 250-252, 2004 | 35 | 2004 |
Device isolation with improved thermal conductivity ME Dahlstrom, D Dang, Q Liu, RM Malladi US Patent 8,912,574, 2014 | 32 | 2014 |
Bipolar transistor with dual shallow trench isolation and low base resistance MH Khater, AD Stricker, BA Orner, ME Dahlstrom US Patent 7,888,745, 2011 | 32 | 2011 |
Transistor and circuit design for 100-200-GHz ICs Z Griffith, Y Dong, D Scott, Y Wei, N Parthasarathy, M Dahlstrom, C Kadow, ... IEEE Journal of Solid-State Circuits 40 (10), 2061-2069, 2005 | 32 | 2005 |
Schottky barrier diodes for millimeter wave SiGe BiCMOS applications RM Rassel, JB Johnson, BA Orner, SK Reynolds, ME Dahlstrom, ... 2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006 | 27 | 2006 |
An 8-GHz continuous-time/spl Sigma/-/spl Delta/analog-digital converter in an InP-based HBT technology S Krishnan, D Scott, Z Griffith, M Urteaga, Y Wei, N Parthasarathy, ... IEEE transactions on microwave theory and techniques 51 (12), 2555-2561, 2003 | 25 | 2003 |
87 GHz static frequency divider in an InP-based mesa DHBT technology S Krishnan, Z Griffith, M Urteaga, Y Wei, D Scott 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC …, 2002 | 25 | 2002 |
G-band (140-220-GHz) InP-based HBT amplifiers M Urteaga, D Scott, S Krishnan, Y Wei, M Dahlstrom, Z Griffith, ... IEEE Journal of Solid-State Circuits 38 (9), 1451-1456, 2003 | 24 | 2003 |
n/sup+/-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs C Kadow, M Dahlstrom, JU Bae, HK Lin, AC Gossard, MJW Rodwell, ... IEEE transactions on electron devices 52 (2), 151-158, 2005 | 22 | 2005 |
InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and f/sub/spl tau//, f/sub max/> 268 GHz Z Griffith, YM Kim, M Dahlstrom, AC Gossard, MJW Rodwell IEEE electron device letters 25 (10), 675-677, 2004 | 19 | 2004 |
Deep submicron InP DHBT technology with electroplated emitter and base contacts M Urteaga, P Rowell, R Pierson, B Brar, M Dahlstrom, Z Griffith, ... Conference Digest [Includes' Late News Papers' volume] Device Research …, 2004 | 19 | 2004 |
InGaAs/InP DHBT’s with> 370 GHz ft and fmax using a Graded Carbon-Doped Base M Dahlström, Z Griffith, M Urteaga, MJW Rodwell, XM Fang, D Lubyshev, ... Post-deadline proceedings of Device Research Conference 2003, 2003 | 17 | 2003 |