(Ga, Mn) As: a new diluted magnetic semiconductor based on GaAs H Ohno, A Shen, F Matsukura, A Oiwa, A Endo, S Katsumoto, Y Iye Applied Physics Letters 69 (3), 363-365, 1996 | 3074 | 1996 |
Transport properties and origin of ferromagnetism in (Ga, Mn) As F Matsukura, H Ohno, A Shen, Y Sugawara Physical Review B 57 (4), R2037, 1998 | 1511 | 1998 |
Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in B Beschoten, PA Crowell, I Malajovich, DD Awschalom, F Matsukura, ... Physical review letters 83 (15), 3073, 1999 | 367 | 1999 |
Epitaxy of (Ga, Mn) As, a new diluted magnetic semiconductor based on GaAs A Shen, H Ohno, F Matsukura, Y Sugawara, N Akiba, T Kuroiwa, A Oiwa, ... Journal of crystal growth 175, 1069-1074, 1997 | 245 | 1997 |
Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn) As/GaAs A Oiwa, S Katsumoto, A Endo, M Hirasawa, Y Iye, H Ohno, F Matsukura, ... Solid state communications 103 (4), 209-213, 1997 | 211 | 1997 |
Spontaneous splitting of ferromagnetic (Ga, Mn) As valence band observed by resonant tunneling spectroscopy H Ohno, N Akiba, F Matsukura, A Shen, K Ohtani, Y Ohno Applied physics letters 73 (3), 363-365, 1998 | 207 | 1998 |
Growth of Cu2O thin films with high hole mobility by introducing a low-temperature buffer layer BS Li, K Akimoto, A Shen Journal of Crystal Growth 311 (4), 1102-1105, 2009 | 176 | 2009 |
Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors Y Iye, A Oiwa, A Endo, S Katsumoto, F Matsukura, A Shen, H Ohno, ... Materials Science and Engineering: B 63 (1-2), 88-95, 1999 | 98 | 1999 |
High absorption quantum-well infrared photodetectors HC Liu, R Dudek, A Shen, E Dupont, CY Song, ZR Wasilewski, ... Applied Physics Letters 79 (25), 4237-4239, 2001 | 95 | 2001 |
An ultrahigh responsivity self-powered solar-blind photodetector based on a centimeter-sized β-Ga 2 O 3/polyaniline heterojunction Y Wang, L Li, H Wang, L Su, H Chen, W Bian, J Ma, B Li, Z Liu, A Shen Nanoscale 12 (3), 1406-1413, 2020 | 87 | 2020 |
Interlayer exchange in (Ga, Mn) As/(Al, Ga) As/(Ga, Mn) As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures N Akiba, F Matsukura, A Shen, Y Ohno, H Ohno, A Oiwa, S Katsumoto, ... Applied physics letters 73 (15), 2122-2124, 1998 | 80 | 1998 |
GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection HC Liu, CY Song, A Shen, M Gao, ZR Wasilewski, M Buchanan Applied Physics Letters 77 (16), 2437-2439, 2000 | 79 | 2000 |
InAs self-organized quantum dashes grown on GaAs (211) B SP Guo, H Ohno, A Shen, F Matsukura, Y Ohno Applied physics letters 70 (20), 2738-2740, 1997 | 61 | 1997 |
Low-temperature molecular beam epitaxial growth of GaAs and (Ga, Mn) As A Shen, F Matsukura, SP Guo, Y Sugawara, H Ohno, M Tani, H Abe, ... Journal of crystal growth 201, 679-683, 1999 | 58 | 1999 |
Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure A Shen, Y Horikoshi, H Ohno, SP Guo Applied physics letters 71 (11), 1540-1542, 1997 | 57 | 1997 |
Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm AGU Perera, SG Matsik, B Yaldiz, HC Liu, A Shen, M Gao, ZR Wasilewski, ... Applied Physics Letters 78 (15), 2241-2243, 2001 | 56 | 2001 |
ZnCdSe∕ ZnCdMgSe quantum cascade electroluminescence KJ Franz, WO Charles, A Shen, AJ Hoffman, MC Tamargo, C Gmachl Applied Physics Letters 92 (12), 2008 | 53 | 2008 |
Faraday rotation of ferromagnetic (Ga, Mn) As T Kuroiwa, T Yasuda, F Matsukura, A Shen, Y Ohno, Y Segawa, H Ohno Electronics Letters 34 (2), 190-192, 1998 | 52 | 1998 |
Y. lye: Appi Phys H Ohno, A Shen, F Matsukura, A Oiwa, A Endo, S Kutsumoto Lett 69, 363, 1996 | 52 | 1996 |
(Ga, Mn) As/GaAs diluted magnetic semiconductor superlattice structures prepared by molecular beam epitaxy A Shen, H Ohno, F Matsukura, Y Sugawara, Y Ohno, N Akiba, T Kuroiwa Japanese journal of applied physics 36 (2A), L73, 1997 | 49 | 1997 |