关注
Andrea Corna
Andrea Corna
Application Scientist, Zurich Instruments
在 zhinst.com 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
A CMOS silicon spin qubit
R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7, 13575, 2016
6072016
CMOS-based cryogenic control of silicon quantum circuits
X Xue, B Patra, JPG van Dijk, N Samkharadze, S Subramanian, A Corna, ...
Nature 593 (7858), 205-210, 2021
2152021
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot
A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj Quantum Information 4 (1), 6, 2018
1072018
A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons
JPG Van Dijk, B Patra, S Subramanian, X Xue, N Samkharadze, A Corna, ...
IEEE Journal of Solid-State Circuits 55 (11), 2930-2946, 2020
962020
19.1 A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4× 32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers
B Patra, JPG van Dijk, S Subramanian, A Corna, X Xue, C Jeon, F Sheikh, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 304-306, 2020
932020
A Scalable Cryo-CMOS 2-to-20GHz Digitally-Intensive Controller for 4× 32 Frequency Multiplexed Spin Qubits/Transmons in 22-nm FinFET Technology for Quantum Computers
B Patra, JPG Van Dijk, A Corna, X Xue, N Samkharadze, A Sammak, ...
2020 International Solid-State Circuits Conference, 2020
93*2020
SOI technology for quantum information processing
S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016
502016
Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
H Bohuslavskyi, D Kotekar-Patil, R Maurand, A Corna, S Barraud, ...
Applied Physics Letters 109 (19), 193101, 2016
412016
Towards scalable silicon quantum computing
M Vinet, L Hutin, B Bertrand, H Bohuslavskyi, A Corna, A Amisse, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
352018
Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.
R Lavieville, F Triozon, S Barraud, A Corna, X Jehl, M Sanquer, J Li, ...
Nano letters 15 (5), 2958-2964, 2015
352015
Si CMOS platform for quantum information processing
L Hutin, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, X Jehl, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
342016
Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
A Crippa, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, AO Orlov, ...
Nano Letters, 2016
332016
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L Bourdet, L Hutin, B Bertrand, A Corna, H Bohuslavskyi, A Amisse, ...
IEEE Transactions on Electron Devices 65 (11), 5151-5156, 2018
282018
All-electrical control of a hybrid electron spin/valley quantum bit in SOI CMOS technology
L Hutin, L Bourdet, B Bertrand, A Corna, H Bohuslavskyi, A Amisse, ...
2018 IEEE Symposium on VLSI Technology, 125-126, 2018
28*2018
Pauli spin blockade in CMOS double quantum dot devices
D Kotekar‐Patil, A Corna, R Maurand, A Crippa, A Orlov, S Barraud, ...
physica status solidi (b) 254 (3), 2017
202017
Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology
S Barraud, R Lavieville, L Hutin, H Bohuslavskyi, M Vinet, A Corna, ...
Technologies 4 (1), 10, 2016
142016
On-chip integration of Si/SiGe-based quantum dots and switched-capacitor circuits
Y Xu, FK Unseld, A Corna, AMJ Zwerver, A Sammak, D Brousse, ...
Applied Physics Letters 117 (14), 144002, 2020
122020
350K operating silicon nanowire single electron/hole transistors scaled down to 3.4 nm diameter and 10nm gate length
R Lavieville, S Barraud, A Corna, X Jehl, M Sanquer, M Vinet
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
112015
Single spin control and readout in silicon coupled quantum dots
A Corna
Université Grenoble Alpes, 2017
72017
Demonstration of Single Hole Transistor and Hybrid Circuits for Multivalued Logic and Memory Applications up to 350 K Using CMOS Silicon Nanowires
R Lavieville, S Barraud, C Arvet, C Vizioz, A Corna, X Jehl, M Sanquer, ...
Advanced Electronic Materials 2 (4), 1500244, 2016
52016
系统目前无法执行此操作,请稍后再试。
文章 1–20