| Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire X Wang, Y Zhang, X Chen, M He, C Liu, Y Yin, X Zou, S Li Nanoscale 6 (20), 12009-12017, 2014 | 127 | 2014 |
| Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD ZJ Liu, T Huang, J Ma, C Liu, KM Lau IEEE Electron Device Letters 35 (3), 330-332, 2014 | 109 | 2014 |
| Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs H Jiang, C Liu, Y Chen, X Lu, CW Tang, KM Lau IEEE Transactions on Electron Devices 64 (3), 832-839, 2017 | 108 | 2017 |
| GaN-on-Si quasi-vertical power MOSFETs C Liu, RA Khadar, E Matioli IEEE Electron Device Letters 39 (1), 71-74, 2017 | 99 | 2017 |
| Fully vertical GaN-on-Si power MOSFETs RA Khadar, C Liu, R Soleimanzadeh, E Matioli IEEE Electron Device Letters 40 (3), 443-446, 2019 | 98 | 2019 |
| Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer T Lu, S Li, C Liu, K Zhang, Y Xu, J Tong, L Wu, H Wang, X Yang, Y Yin, ... Applied Physics Letters 100 (14), 2012 | 91 | 2012 |
| 820-V GaN-on-Si quasi-vertical pin diodes with BFOM of 2.0 GW/cm2 RA Khadar, C Liu, L Zhang, P Xiang, K Cheng, E Matioli IEEE Electron Device Letters 39 (3), 401-404, 2018 | 80 | 2018 |
| Vertical GaN-on-Si MOSFETs with monolithically integrated freewheeling Schottky barrier diodes C Liu, RA Khadar, E Matioli IEEE Electron Device Letters 39 (7), 1034-1037, 2018 | 67 | 2018 |
| Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors C Liu, Y Cai, Z Liu, J Ma, KM Lau Applied Physics Letters 106 (18), 2015 | 63 | 2015 |
| Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors Z Liu, J Ma, T Huang, C Liu, K May Lau Applied Physics Letters 104 (9), 2014 | 55 | 2014 |
| Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters Y Cai, X Zou, C Liu, KM Lau IEEE Electron Device Letters 39 (2), 224-227, 2017 | 52 | 2017 |
| Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy C Liu, Y Cai, H Jiang, KM Lau Optics Letters 43 (14), 3401-3404, 2018 | 51 | 2018 |
| The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer TP Lu, ST Li, K Zhang, C Liu, GW Xiao, YG Zhou, SW Zheng, YA Yin, ... Chinese Physics B 20 (9), 098503, 2011 | 50 | 2011 |
| Low-leakage high-breakdown laterally integrated HEMT-LED via n-GaN electrode C Liu, Y Cai, X Zou, KM Lau IEEE Photonics Technology Letters 28 (10), 1130-1133, 2016 | 46 | 2016 |
| Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition X Lu, J Ma, H Jiang, C Liu, KM Lau Applied Physics Letters 105 (10), 2014 | 43 | 2014 |
| Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing X Lu, H Jiang, C Liu, X Zou, KM Lau Semiconductor Science and Technology 31 (5), 055019, 2016 | 37 | 2016 |
| Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers L Wu, S Li, C Liu, H Wang, T Lu, K Zhang, G Xiao, Y Zhou, S Zheng, Y Yin, ... Chinese Physics B 21 (6), 068506, 2012 | 34 | 2012 |
| Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure X Lu, C Liu, H Jiang, X Zou, A Zhang, KM Lau Applied Physics Letters 109 (5), 2016 | 32 | 2016 |
| Blue InGaN light-emitting diodes with dip-shaped quantum wells TP Lu, ST Li, K Zhang, C Liu, GW Xiao, YG Zhou, SW Zheng, YA Yin, ... Chinese Physics B 20 (10), 108504, 2011 | 32* | 2011 |
| Enhanced performance of blue light-emitting diodes with InGaN/GaN superlattice as hole gathering layer C Liu, T Lu, L Wu, H Wang, Y Yin, G Xiao, Y Zhou, S Li IEEE Photonics Technology Letters 24 (14), 1239-1241, 2012 | 31 | 2012 |
Kei May LauHong Kong University of Science & Technology在 ust.hk 的电子邮件经过验证
