| An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation T Suemitsu, T Enoki, N Sano, M Tomizawa, Y Ishii IEEE Transactions on Electron Devices 45 (12), 2390-2399, 1998 | 152 | 1998 |
| Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Y Kurita, G Ducournau, D Coquillat, A Satou, K Kobayashi, ... Applied Physics Letters 104 (25), 2014 | 143 | 2014 |
| 30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs T Suemitsu, H Yokoyama, T Ishii, T Enoki, G Meneghesso, E Zanoni IEEE Transactions on Electron devices 49 (10), 1694-1700, 2002 | 110 | 2002 |
| Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems T Otsuji, YM Meziani, T Nishimura, T Suemitsu, W Knap, E Sano, T Asano, ... Journal of Physics: Condensed Matter 20 (38), 384206, 2008 | 98 | 2008 |
| Optical study of high-biased AlGaN/GaN high-electron-mobility transistors N Shigekawa, K Shiojima, T Suemitsu Journal of applied physics 92 (1), 531-535, 2002 | 98 | 2002 |
| High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology T Suemitsu, H Yokoyama, Y Umeda, T Enoki, Y Ishii IEEE Transactions on Electron Devices 46 (6), 1074-1080, 1999 | 87 | 1999 |
| Improved recessed-gate structure for sub-0.1-µm-gate InP-based high electron mobility transistors TST Suemitsu, TET Enoki, HYH Yokoyama, YIY Ishii Japanese journal of applied physics 37 (3S), 1365, 1998 | 79 | 1998 |
| 30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency TST Suemitsu, TIT Ishii, HYH Yokoyama, TET Enoki, YIY Ishii, ... Japanese journal of applied physics 38 (2B), L154, 1999 | 78 | 1999 |
| Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors N Shigekawa, K Shiojima, T Suemitsu Applied Physics Letters 79 (8), 1196-1198, 2001 | 72 | 2001 |
| Correlation between current–voltage characteristics and dislocations for n-GaN Schottky contacts K Shiojima, T Suemitsu, M Ogura Applied Physics Letters 78 (23), 3636-3638, 2001 | 58 | 2001 |
| Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures T Otsuji, H Karasawa, T Watanabe, T Suemitsu, M Suemitsu, E Sano, ... Comptes Rendus Physique 11 (7-8), 421-432, 2010 | 57 | 2010 |
| Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector S Boubanga-Tombet, Y Tanimoto, A Satou, T Suemitsu, Y Wang, ... Applied Physics Letters 104 (26), 2014 | 56 | 2014 |
| Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications H Fukidome, R Takahashi, S Abe, K Imaizumi, H Handa, HC Kang, ... Journal of Materials Chemistry 21 (43), 17242-17248, 2011 | 50 | 2011 |
| 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates T Suemitsu, T Ishii, H Yokoyama, Y Umeda, T Enoki, Y Ishii, T Tamamura International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 45 | 1998 |
| Electrical characteristic of AlGaN/GaN high-electron-mobility transistors with recess gate structure NM Shrestha, Y Li, T Suemitsu, S Samukawa IEEE Transactions on Electron Devices 66 (4), 1694-1698, 2019 | 42 | 2019 |
| Room temperature logic inverter on epitaxial graphene-on-silicon device A El Moutaouakil, HC Kang, H Handa, H Fukidome, T Suemitsu, E Sano, ... Japanese journal of applied physics 50 (7R), 070113, 2011 | 41 | 2011 |
| Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on grown by metalorganic chemical … K Shiojima, T Suemitsu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 36 | 2003 |
| Epitaxial graphene top-gate FETs on silicon substrates HC Kang, H Karasawa, Y Miyamoto, H Handa, H Fukidome, T Suemitsu, ... Solid-State Electronics 54 (10), 1071-1075, 2010 | 35 | 2010 |
| An intrinsic delay extraction method for Schottky gate field effect transistors T Suemitsu IEEE electron device letters 25 (10), 669-671, 2004 | 34 | 2004 |
| Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors T Suemitsu, K Shiojima, T Makimura, N Shigekawa Japanese journal of applied physics 44 (1L), L211, 2005 | 31 | 2005 |
