| Nanoscale Structuring by Misfit Dislocations in Si(1− x)Ge(x)/Si Epitaxial Systems SY Shiryaev, F Jensen, JL Hansen, JW Petersen, AN Larsen Physical Review Letters 78 (3), 503, 1997 | 231 | 1997 |
| Fibronectin adsorption, cell adhesion, and proliferation on nanostructured tantalum surfaces A Dolatshahi-Pirouz, T Jensen, DC Kraft, M Foss, P Kingshott, JL Hansen, ... Acs Nano 4 (5), 2874-2882, 2010 | 187 | 2010 |
| Ge self-diffusion in epitaxial Si(1− x)Ge(x) layers NR Zangenberg, JL Hansen, J Fage-Pedersen, AN Larsen Physical Review Letters 87 (12), 125901, 2001 | 186 | 2001 |
| Boron and phosphorus diffusion in strained and relaxed Si and SiGe NR Zangenberg, J Fage-Pedersen, JL Hansen, AN Larsen Journal of Applied Physics 94 (6), 3883-3890, 2003 | 171 | 2003 |
| Irradiation-induced defects in Ge studied by transient spectroscopies J Fage-Pedersen, AN Larsen, A Mesli Physical review B 62 (15), 10116, 2000 | 165 | 2000 |
| Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ... Applied Physics Letters 82 (8), 1212-1214, 2003 | 162 | 2003 |
| Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results S Brotzmann, H Bracht, JL Hansen, AN Larsen, E Simoen, EE Haller, ... Physical Review B 77 (23), 235207, 2008 | 149 | 2008 |
| Heavy doping effects in the diffusion of group IV and V impurities in silicon AN Larsen, KK Larsen, PE Andersen, BG Svensson Journal of applied physics 73 (2), 691-698, 1993 | 143 | 1993 |
| Diffusion of Sb in strained and relaxed Si and SiGe P Kringhøj, AN Larsen, SY Shirayev Physical review letters 76 (18), 3372, 1996 | 128 | 1996 |
| Chemical bath deposition of PbS nanocrystals: Effect of substrate AP Gaiduk, PI Gaiduk, AN Larsen Thin Solid Films 516 (12), 3791-3795, 2008 | 104 | 2008 |
| Diffusion of silicon in crystalline germanium HH Silvestri, H Bracht, JL Hansen, AN Larsen, EE Haller Semiconductor science and technology 21 (6), 758, 2006 | 104 | 2006 |
| The nature of electrically inactive antimony in silicon A Nylandsted Larsen, FT Pedersen, G Weyer, R Galloni, R Rizzoli, ... Journal of applied physics 59 (6), 1908-1917, 1986 | 94 | 1986 |
| Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ... Physical review letters 91 (24), 245502, 2003 | 92 | 2003 |
| Composition dependence of Si and Ge diffusion in relaxed Si(1− x)Ge(x) alloys R Kube, H Bracht, JL Hansen, AN Larsen, EE Haller, S Paul, W Lerch Journal of Applied Physics 107 (7), 073520, 2010 | 88 | 2010 |
| Interstitial-mediated diffusion in germanium under proton irradiation H Bracht, S Schneider, JN Klug, CY Liao, JL Hansen, EE Haller, ... Physical Review Letters 103 (25), 255501, 2009 | 84 | 2009 |
| Covalency effects on implanted119Sn in group IV semiconductors studied by Mössbauer and channeling experiments G Weyer, A Nylandsted-Larsen, BI Deutch, JU Andersen, E Antoncik Hyperfine Interactions 1, 93-112, 1975 | 83 | 1975 |
| Diffusion of Sb in relaxed Si(1− x)Ge(x) AN Larsen, P Kringhøj Applied physics letters 68 (19), 2684-2686, 1996 | 82 | 1996 |
| Epitaxial growth of Ge and SiGe on Si substrates AN Larsen Materials science in semiconductor processing 9 (4-5), 454-459, 2006 | 78 | 2006 |
| Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density PI Gaiduk, AN Larsen, JL Hansen Thin Solid Films 367 (1-2), 120-125, 2000 | 70 | 2000 |
| Piezoresistance of silicon and strained Si0. 9Ge0. 1 J Richter, O Hansen, AN Larsen, JL Hansen, GF Eriksen, EV Thomsen Sensors and Actuators A: Physical 123, 388-396, 2005 | 67 | 2005 |
Гайдук, Петр Иванович; PI Gaiduk, П...Belarusian State University, Department of RF&CT, 4 Nezavisimosti av., 220030 Minsk, Belarus;在 bsu.by 的电子邮件经过验证
