关注
Ryo Tanaka
Ryo Tanaka
Fuji Electric Co., Ltd.
在 fujielectric.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ...
Japanese Journal of Applied Physics 56 (3), 031001, 2017
1052017
Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process
R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo
Japanese Journal of Applied Physics 59 (SG), SGGD02, 2020
722020
Planar or Perpendicular? Conformational Preferences of π‐Conjugated Metalloporphyrin Dimers and Trimers in Supramolecular Tubular Arrays
A Tsuda, H Hu, R Tanaka, T Aida
Angewandte Chemie International Edition 44 (31), 4884-4888, 2005
572005
Solution growth of high-quality 3C-SiC crystals
T Ujihara, R Maekawa, R Tanaka, K Sasaki, K Kuroda, Y Takeda
Journal of Crystal Growth 310 (7-9), 1438-1442, 2008
552008
Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs
R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo, K Nakagawa
Applied Physics Express 12 (5), 054001, 2019
462019
Demonstration of GaN static induction transistor (SIT) using self-aligned process
W Li, D Ji, R Tanaka, S Mandal, M Laurent, S Chowdhury
IEEE Journal of the Electron Devices Society 5 (6), 485-490, 2017
342017
Combustion characteristics of a heat-recirculating ceramic burner using a low-calorific-fuel
R Tanaka, M Shinoda, N Arai
Energy Conversion and Management 42 (15-17), 1897-1907, 2001
342001
Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
A Kumar, J Uzuhashi, T Ohkubo, R Tanaka, S Takashima, M Edo, K Hono
Journal of Applied Physics 126 (23), 2019
252019
Influence of implanted Mg concentration on defects and Mg distribution in GaN
A Kumar, W Yi, J Uzuhashi, T Ohkubo, J Chen, T Sekiguchi, R Tanaka, ...
Journal of Applied Physics 128 (6), 2020
232020
High-quality and large-area 3C–SiC growth on 6H–SiC (0 0 0 1) seed crystal with top-seeded solution method
T Ujihara, K Seki, R Tanaka, S Kozawa, K Morimoto, K Sasaki, Y Takeda
Journal of crystal growth 318 (1), 389-393, 2011
222011
The geometry of concurrent interaction: Handling multiple ports by way of multiple tokens
U Dal Lago, R Tanaka, A Yoshimizu
2017 32nd Annual ACM/IEEE Symposium on Logic in Computer Science (LICS), 1-12, 2017
212017
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam
A Uedono, R Tanaka, S Takashima, K Ueno, M Edo, K Shima, K Kojima, ...
Scientific reports 11 (1), 20660, 2021
192021
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
K Shima, R Tanaka, S Takashima, K Ueno, M Edo, K Kojima, A Uedono, ...
Applied Physics Letters 119 (18), 2021
172021
Mg diffusion and activation along threading dislocations in GaN
W Yi, A Kumar, J Uzuhashi, T Kimura, R Tanaka, S Takashima, M Edo, ...
Applied Physics Letters 116 (24), 2020
172020
Effectful applicative similarity for call-by-name lambda calculi
U Dal Lago, F Gavazzo, R Tanaka
Theoretical Computer Science 813, 234-247, 2020
152020
Optimization of heat transfer performances of a heat-recirculating ceramic burner during methane/air and low-calorific-fuel/air combustion
M Shinoda, R Tanaka, N Arai
Energy conversion and management 43 (9-12), 1479-1491, 2002
142002
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
J Uzuhashi, J Chen, A Kumar, W Yi, T Ohkubo, R Tanaka, S Takashima, ...
Journal of Applied Physics 131 (18), 2022
122022
Single W production at LEP2
R Tanaka
arXiv preprint hep-ex/9811039, 1998
101998
Demonstration of 1200 V/1.4 mΩ cm
R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo
Jpn. J. Appl. Phys 59, 2020
82020
Generation of field-emitting surface dielectric barrier discharges in Ar and N2
M Kanno, R Tanaka, S Stauss, T Ito, K Terashima
AIP Advances 9 (5), 2019
72019
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