| Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ... US Patent 6,177,688, 2001 | 444 | 2001 |
| GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis Applied physics letters 67 (3), 401-403, 1995 | 307 | 1995 |
| Pendeoepitaxy of gallium nitride thin films K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ... Applied Physics Letters 75 (2), 196-198, 1999 | 260 | 1999 |
| Cosmic ray protons in the inner galaxy and the galactic center gamma-ray excess E Carlson, S Profumo Physical Review D 90 (2), 023015, 2014 | 215 | 2014 |
| Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon JJ Cuomo, NM Williams, AD Hanser, EP Carlson, DT Thomas US Patent 6,692,568, 2004 | 190 | 2004 |
| Ion implantation into gallium nitride C Ronning, EP Carlson, RF Davis Physics Reports 351 (5), 349-385, 2001 | 182 | 2001 |
| Pendeo-epitaxy-A new approach for lateral growth of gallium nitride structures TS Zheleva, SA Smith, DB Thomson, T Gehrke, KJ Linthicum, ... MRS Online Proceedings Library (OPL) 537, G3. 38, 1998 | 159 | 1998 |
| Antihelium from dark matter E Carlson, A Coogan, T Linden, S Profumo, A Ibarra, S Wild Physical Review D 89 (7), 076005, 2014 | 100 | 2014 |
| MIIIN based materials and methods and apparatus for producing same JJ Cuomo, NM Williams, AD Hanser, EP Carlson, DT Thomas US Patent 6,784,085, 2004 | 92 | 2004 |
| Optical activation of Be implanted into GaN C Ronning, EP Carlson, DB Thomson, RF Davis Applied physics letters 73 (12), 1622-1624, 1998 | 78 | 1998 |
| Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α (6H)–SiC (0001) substrates via organometallic vapor … TW Weeks, MD Bremser, KS Ailey, E Carlson, WG Perry, EL Piner, ... Journal of materials research 11 (4), 1011-1018, 1996 | 64 | 1996 |
| Amorphous boron coatings produced with vacuum arc deposition technology CC Klepper, RC Hazelton, EJ Yadlowsky, EP Carlson, MD Keitz, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (3 …, 2002 | 59 | 2002 |
| Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride … KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ... US Patent 6,376,339, 2002 | 55 | 2002 |
| Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques KJ Linthicum, T Gehrke, DB Thomson, KM Tracy, EP Carlson, TP Smith, ... MRS Online Proceedings Library (OPL) 537, G4. 9, 1998 | 49 | 1998 |
| X-ray photoelectron spectroscopy analysis of GaN/(0001) AlN and AlN/(0001) GaN growth mechanisms SW King, EP Carlson, RJ Therrien, JA Christman, RJ Nemanich, RF Davis Journal of applied physics 86 (10), 5584-5593, 1999 | 47 | 1999 |
| Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ... physica status solidi (b) 254 (8), 1600774, 2017 | 44 | 2017 |
| Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors IC Kizilyalli, YA Xu, E Carlson, J Manser, DW Cunningham 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 43 | 2017 |
| Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ... US Patent 6,462,355, 2002 | 40 | 2002 |
| Ion implantation of epitaxial GaN films: damage, doping and activation N Parikh, A Suvkhanov, M Lioubtchenko, E Carlson, M Bremser, D Bray, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997 | 40 | 1997 |
| X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy M Park, JP Maria, JJ Cuomo, YC Chang, JF Muth, RM Kolbas, ... Applied physics letters 81 (10), 1797-1799, 2002 | 39 | 2002 |
Robert F. DavisCarnegie Mellon University在 andrew.cmu.edu 的电子邮件经过验证
