Encyclopedia of Complexity and Systems Science S Ahmed, N Kharche, R Rahman, M Usman, S Lee, H Ryu, H Bae, ... Springer, 2009 | 703* | 2009 |
Quantum computing: A taxonomy, systematic review and future directions SS Gill, A Kumar, H Singh, M Singh, K Kaur, M Usman, R Buyya Software: Practice and Experience 52 (1), 66-114, 2022 | 297 | 2022 |
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs M Usman, CA Broderick, A Lindsay, EPO Reilly Physical Review B 84, 245202, 2011 | 278 | 2011 |
Band engineering in dilute nitride and bismide semiconductor lasers CA Broderick, M Usman, SJ Sweeney, EP O'Reilly Semicond. Sci. Technol. 27, 094011, 2012 | 205 | 2012 |
Multimillion atom simulations with nemo3d S Ahmed, N Kharche, R Rahman, M Usman, S Lee, H Ryu, H Bae, ... Encyclopedia of Complexity and Systems Science, 5745-5783, 2009 | 181* | 2009 |
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part II: Applications G Klimeck, SS Ahmed, N Kharche, M Korkusinski, M Usman, M Prada, ... Electron Devices, IEEE Transactions on 54 (9), 2090-2099, 2007 | 150 | 2007 |
Impact of alloy disorder on the band structure of compressively strained GaBiAs M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ... Physical Review B—Condensed Matter and Materials Physics 87 (11), 115104, 2013 | 93 | 2013 |
Derivation of 12-and 14-band k· p Hamiltonians for dilute bismide and bismide-nitride semiconductors CA Broderick, M Usman, EP O'Reilly Semiconductor science and technology 28 (12), 125025, 2013 | 87 | 2013 |
Theory of the electronic structure of dilute bismide alloys: tight-binding and k· p models CA Broderick, M Usman, EP O’Reilly Bismuth-Containing Compounds, 55-88, 2013 | 75* | 2013 |
Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data M Usman, H Ryu, I Woo, DS Ebert, G Klimeck Nanotechnology, IEEE Transactions on 8 (3), 330-344, 2009 | 68 | 2009 |
Spatial metrology of dopants in silicon with exact lattice site precision M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ... Nature nanotechnology 11 (9), 763-768, 2016 | 65 | 2016 |
Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks M Usman, T Inoue, Y Harda, G Klimeck, T Kita Physical Review B 84 (11), 115321, 2011 | 61 | 2011 |
Distributed Processing Architecture With Scalable Processing Layers SA Khan, MM Rehmatullah, S Ahmed, M Usman, M Ahmad US Patent App. 12/335,644, 2009 | 58 | 2009 |
Surface defects: possible source of room temperature ferromagnetism in Co-doped ZnO nanorods N Tahir, A Karim, KA Persson, ST Hussain, AG Cruz, M Usman, M Naeem, ... The Journal of Physical Chemistry C 117 (17), 8968-8973, 2013 | 48 | 2013 |
Size-dependent Electronic and Polarization Properties of Multi-Layer InAs Quantum Dot Molecules M Usman Quantum Dot Molecules, 149-175, 2013 | 47* | 2013 |
Time-resolved luminescence studies of proton-implanted GaN A Pinos, S Marcinkevičius, M Usman, A Hallén Applied Physics Letters 95 (11), 2009 | 47 | 2009 |
12‐band k· p model for dilute bismide alloys of (In) GaAs derived from supercell calculations CA Broderick, M Usman, EP O'Reilly physica status solidi (b), 2013 | 43 | 2013 |
Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations M Usman, YHM Tan, H Ryu, SS Ahmed, HJ Krenner, TB Boykin, ... Nanotechnology 22 (31), 315709, 2011 | 40 | 2011 |
Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) M Usman, S Heck, E Clarke, P Spencer, H Ryu, R Murray, G Klimeck Journal of Applied Physics 109, 104510, 2011 | 38 | 2011 |
Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1− x/GaAs epilayers CA Broderick, S Mazzucato, H Carrère, T Amand, H Makhloufi, A Arnoult, ... Physical Review B 90 (19), 195301, 2014 | 37 | 2014 |