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Santosh Kurinec
Santosh Kurinec
Professor of Electrical & Microelectronic Engineering
在 rit.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation
S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ...
Solid-State Electronics 48 (10-11), 1907-1910, 2004
612004
Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ...
IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003
602003
Examination of the interplay between polarization switching and charge trapping in ferroelectric FET
S Deng, Z Jiang, S Dutta, H Ye, W Chakraborty, S Kurinec, S Datta, K Ni
2020 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2020
482020
Can oxidation and other treatments help us understand the nature of light-emitting porous silicon?
PM Fauchet, E Ettedgui, A Raisanen, LJ Brillson, F Seiferth, SK Kurinec, ...
MRS Online Proceedings Library (OPL) 298, 271, 1993
471993
Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration
SY Chung, N Jin, PR Berger, R Yu, PE Thompson, R Lake, SL Rommel, ...
Applied physics letters 84 (14), 2688-2690, 2004
442004
Enhancement and suppression of the formation of porous silicon
SP Duttagupta, C Peng, PM Fauchet, SK Kurinec, TN Blanton
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
441995
Crystallization and grain growth behavior of CoFeB and MgO layers in multilayer magnetic tunnel junctions
SS Mukherjee, F Bai, D MacMahon, CL Lee, SK Gupta, SK Kurinec
Journal of Applied Physics 106 (3), 2009
402009
Optical, electrical, and structural properties of sputtered aluminum alloy thin films with copper, titanium and chromium additions
LW Barron, J Neidrich, SK Kurinec
Thin Solid Films 515 (7-8), 3363-3372, 2007
392007
Electrophoretic deposition of monochrome and color phosphor screens for information displays
JB Talbot, E Sluzky, SK Kurinec
Journal of Materials Science 39, 771-778, 2004
382004
Nanoscale semiconductor memories: technology and applications
SK Kurinec, K Iniewski
CRC press, 2013
372013
Ion implantation of porous silicon
C Peng, PM Fauchet, JM Rehm, GL McLendon, F Seiferth, SK Kurinec
Applied physics letters 64 (10), 1259-1261, 1994
361994
Synthesis and electrophoretic deposition of magnetic nickel ferrite nanoparticles
SK Kurinec, N Okeke, SK Gupta, H Zhang, TD Xiao
Journal of materials science 41, 8181-8185, 2006
322006
Attenuated phase shift mask materials for 248 and 193 nm lithography
BW Smith, S Butt, Z Alam, S Kurinec, RL Lane
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
321996
Evaluation of Si:HfO2 Ferroelectric Properties in MFM and MFIS Structures
JD Anderson, J Merkel, D Macmahon, SK Kurinec
IEEE Journal of the Electron Devices Society 6, 525-534, 2018
312018
Unraveling the dynamics of charge trapping and de-trapping in ferroelectric FETs
S Deng, Z Zhao, YS Kim, S Duenkel, D MacMahon, R Tiwari, ...
IEEE Transactions on Electron Devices 69 (3), 1503-1511, 2022
302022
Luminescence properties of thin film Ta2Zn3O8 and Mn doped Ta2Zn3O8
PD Rack, MD Potter, S Kurinec, W Park, J Penczek, BK Wagner, ...
Journal of applied physics 84 (8), 4466-4470, 1998
301998
Influence of Sn migration on phase transition in GeTe and Ge2Se3 thin films
A Devasia, S Kurinec, KA Campbell, S Raoux
Applied Physics Letters 96 (14), 2010
272010
Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping
SL Rommel, D Pawlik, P Thomas, M Barth, K Johnson, SK Kurinec, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
272008
Negative ion resputtering in thin films
PD Rack, MD Potter, A Woodard, S Kurinec
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (5 …, 1999
271999
Method of fabricating an ultra-high resolution three-color screen
E Sluzky, SK Kurinec, KR Hesse, L Ternullo Jr
US Patent 5,582,703, 1996
271996
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