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Hanling Long
Hanling Long
在 hust.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
Ultrahigh degree of optical polarization above 80% in AlGaN-based deep-ultraviolet LED with moth-eye microstructure
S Wang, J Dai, J Hu, S Zhang, L Xu, H Long, J Chen, Q Wan, H Kuo, ...
ACS photonics 5 (9), 3534-3540, 2018
612018
High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD
H Long, J Dai, Y Zhang, S Wang, B Tan, S Zhang, L Xu, M Shan, ZC Feng, ...
Applied physics letters 114 (4), 2019
532019
Fabrication of phosphor glass film on aluminum plate by using lead-free tellurite glass for laser-driven white lighting
H Wang, Y Mou, Y Peng, Y Zhang, A Wang, L Xu, H Long, M Chen, J Dai, ...
Journal of Alloys and Compounds 814, 152321, 2020
452020
Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD
H Long, S Wang, J Dai, F Wu, J Zhang, J Chen, R Liang, ZC Feng, ...
Optics express 26 (2), 680-686, 2018
402018
Enhanced performance of AlGaN-based deep ultraviolet light-emitting diodes with chirped superlattice electron deceleration layer
J Hu, J Zhang, Y Zhang, H Zhang, H Long, Q Chen, M Shan, S Du, J Dai, ...
Nanoscale research letters 14, 1-8, 2019
322019
Deep UV laser at 249 nm based on GaN quantum wells
M Shan, Y Zhang, TB Tran, J Jiang, H Long, Z Zheng, A Wang, W Guo, ...
ACS photonics 6 (10), 2387-2391, 2019
292019
Enhanced light extraction efficiency of AlGaN-based deep ultraviolet light-emitting diodes by incorporating high-reflective n-type electrode made of Cr/Al
Y Gao, Q Chen, S Zhang, H Long, J Dai, H Sun, C Chen
IEEE transactions on electron devices 66 (7), 2992-2996, 2019
272019
Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1− xN templates
H Long, F Wu, J Zhang, S Wang, J Chen, C Zhao, ZC Feng, J Xu, X Li, ...
Journal of Physics D: Applied Physics 49 (41), 415103, 2016
242016
Fast growth of high quality AlN films on sapphire using a dislocation filtering layer for ultraviolet light-emitting diodes
Y Zhang, H Long, J Zhang, B Tan, Q Chen, S Zhang, M Shan, Z Zheng, ...
CrystEngComm 21 (27), 4072-4078, 2019
232019
Photolithography allows high-Q AlN microresonators for near octave-spanning frequency comb and harmonic generation
J Liu, H Weng, AA Afridi, J Li, J Dai, X Ma, H Long, Y Zhang, Q Lu, ...
Optics Express 28 (13), 19270-19280, 2020
222020
Improvement of interface thermal resistance for surface-mounted ultraviolet light-emitting diodes using a graphene oxide silicone composite
R Liang, J Dai, L Ye, L Xu, Y Peng, S Wang, J Chen, H Long, C Chen
ACS omega 2 (8), 5005-5011, 2017
212017
Monolithic integration of deep ultraviolet LED with a multiplicative photoelectric converter
S Wang, H Long, Y Zhang, Q Chen, J Dai, S Zhang, J Chen, R Liang, L Xu, ...
Nano Energy 66, 104181, 2019
202019
Enhanced optical performance of AlGaN-based deep ultraviolet light-emitting diodes by electrode patterns design
Q Chen, J Dai, X Li, Y Gao, H Long, ZH Zhang, C Chen, HC Kuo
IEEE Electron Device Letters 40 (12), 1925-1928, 2019
202019
Bio-inspired flexible fluoropolymer film for all-mode light extraction enhancement
R Liang, R Hu, H Long, X Huang, J Dai, L Xu, L Ye, T Zhai, H Kuo, ...
ACS applied materials & interfaces 11 (21), 19623-19630, 2019
172019
AlN gradient interlayer design for the growth of high-quality AlN epitaxial film on sputtered AlN/sapphire substrate
B Tan, J Hu, J Zhang, Y Zhang, H Long, J Chen, S Du, J Dai, C Chen, ...
CrystEngComm 20 (41), 6557-6564, 2018
172018
Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer
J He, S Wang, J Chen, F Wu, J Dai, H Long, Y Zhang, W Zhang, ZC Feng, ...
Nanotechnology 29 (19), 195203, 2018
162018
Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement
H Xu, H Long, M Sheikhi, L Li, W Guo, J Dai, C Chen, J Ye
Nanotechnology 30 (43), 435202, 2019
152019
Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence
F Wu, J Zhang, S Wang, H Long, J Dai, ZC Feng, Z Gong, C Chen
Optical Materials Express 5 (11), 2608-2615, 2015
142015
Reduction of structural thermal resistance for deep ultraviolet light-emitting diodes fabricated on AlN ceramic substrate via copper-filled thermal holes
L Xu, R Liang, J Dai, H Long, S Wang, J Chen, J Xu, X Li, C Chen
IEEE Transactions on Components, Packaging and Manufacturing Technology 8 …, 2018
132018
Enhanced heat dissipation of phosphor film in WLEDs by AlN-coated sapphire plate
Z Zheng, J Dai, Y Zhang, H Wang, A Wang, M Shan, H Long, Y Peng, ...
IEEE Transactions on Electron Devices 67 (8), 3180-3185, 2020
102020
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