| IV group dopant compensation effect in CdTe O Panchuk, A Savitskiy, P Fochuk, Y Nykonyuk, O Parfenyuk, ... Journal of crystal growth 197 (3), 607-611, 1999 | 85 | 1999 |
| Indium dopant behaviour in CdTe single crystals P Fochuk, O Panchuk, P Feychuk, L Shcherbak, A Savitskyi, O Parfenyuk, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2001 | 49 | 2001 |
| Electrical and optical properties of TiO2 and TiO2:Fe thin films MN Solovan, PD Maryanchuk, VV Brus, OA Parfenyuk Inorganic Materials 48, 1026-1032, 2012 | 48 | 2012 |
| Surface–barrier heterojunctions TiO2/CdZnTe VV Brus, MI Ilashchuk, ZD Kovalyuk, PD Maryanchuk, OA Parfenyuk Semiconductor science and technology 28 (1), 015014, 2012 | 27 | 2012 |
| Thermostability of physical properties of cadmium telluride crystals AV Savitsky, MI Ilashchuk, OA Parfenyuk, KS Ulyanytsky, VR Burachek, ... Thin Solid Films 361, 203-207, 2000 | 26 | 2000 |
| Comparison of optical properties of TiO₂ thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques VV Brus, ZD Kovalyuk, OA Parfenyuk, ND Vakhnyak Semiconductor Physics Quantum Electronics & Optoelectronics, 2011 | 23 | 2011 |
| Relaxation processes in CdTeCl crystals AV Savitsky, OA Parfenyuk, MI Ilashchuk, PM Fochouk, ND Korbutyak Semiconductor science and technology 15 (3), 263, 2000 | 22 | 2000 |
| Influence of heat treatment of the base material on the electrical properties of anisotyped heterojunctions n-ZnO: Al/p-CdZnTe EV Maistruk, IG Orletsky, MI Ilashchuk, IP Koziarskyi, DP Koziarskyi, ... Semiconductor Science and Technology 34 (4), 045016, 2019 | 21 | 2019 |
| Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions IG Orletskyi, MI Ilashchuk, MN Solovan, PD Maryanchuk, OA Parfenyuk, ... Semiconductors 52, 1171-1177, 2018 | 16 | 2018 |
| Fabrication and electrical characterization of the anisotype n-ZnO/p-CdTe heterostructures for solar cell applications VV Khomyak, MI Ilashchuk, OA Parfenyuk, II Shtepliuk Journal of Applied Physics 114 (22), 2013 | 13 | 2013 |
| Электрофизические свойства и низкотемпературная фотолюминесценция монокристаллов CdTe, легированных Si ОА Парфенюк, МИ Илащук, КС Уляницкий, ПМ Фочук, ОМ Стрильчук, ... Физика и техника полупроводников 40 (2), 148-152, 2006 | 13 | 2006 |
| Optical and electrical properties of thin NiO films deposited by reactive magnetron sputtering and spray pyrolysis HP Parkhomenko, MN Solovan, AI Mostovoi, IG Orletskii, OA Parfenyuk, ... Optics and Spectroscopy 122, 944-948, 2017 | 12 | 2017 |
| ЭЛЕКТРИЧЕСКИЕ И ОПТИЧЕСКИЕ СВОЙСТВА ТОНКИХ ПЛЕНОК TiO2 И TiO2:Fe МН Солован, ПД Марьянчук, ВВ Брус, ОА Парфенюк Неорганические материалы 48 (10), 1154-1154, 2012 | 12 | 2012 |
| Photoelectric properties of CdTe: Sn semiinsulating crystals AV Savitsky, OA Parfenyuk, MI Ilashchuk, KS Ulyanytsky, AI Savchuk, ... Optical materials 18 (1), 167-169, 2001 | 12 | 2001 |
| Редкие металлы в жаропрочных сплавах ЕМ Савицкий Изв. АН СССР, ОТН, металлургия и топливо, 52-69, 1960 | 12 | 1960 |
| Compensating effect of lead impurity in cadmium telluride AV Savitskij, OA Parfenuyk, MI Ilashuk, PA Pavlin Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy 25 (11), 1848-1852, 1989 | 11 | 1989 |
| Compensation effect of Sn impurity in cadmium telluride OA Parfenyuk, AV Savitskij, PA Pavlin, AL Al'bota Izv. Vyssh. Uchebn. Zaved., Fiz.;(USSR) 29 (4), 1986 | 11 | 1986 |
| Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals OA Parfenyuk, MI Ilashchuk, KS Ulyanitskiĭ, PM Fochuk, OM Strilchuk, ... Semiconductors 40, 143-147, 2006 | 9 | 2006 |
| Электропроводность полуизолирующего CdTe ВВ Матлак, МИ Илащук, ОА Парфенюк, ПА Павлин, АВ Савицкий Физика и техника полупроводников 16 (10), 89-92, 1982 | 9 | 1982 |
| Electrical characteristics of CdTe: Pb single crystals at high temperatures PM Fochuk, OA Parfenyuk, OE Panchuk Semiconductors 40, 646-650, 2006 | 8 | 2006 |
