Perspective of zinc oxide based thin film transistors: a comprehensive review K Kandpal, N Gupta Microelectronics International 35 (1), 52-63, 2018 | 32 | 2018 |
Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies K Kandpal, N Gupta Journal of Materials Science: Materials in Electronics 27, 5972-5981, 2016 | 31 | 2016 |
On the Threshold Voltage and Performance of ZnO-Based Thin-Film Transistors with a ZrO2 Gate Dielectric K Kandpal, N Gupta, J Singh, C Shekhar Journal of Electronic Materials 49, 3156-3164, 2020 | 25 | 2020 |
Design of threshold voltage insensitive pixel driver circuitry using a-IGZO TFT for AMOLED displays A Sodhani, K Kandpal Microelectronics Journal 101, 104819, 2020 | 24 | 2020 |
Effect of thickness on the properties of ZnO thin films prepared by reactive RF sputtering K Kandpal, J Singh, N Gupta, C Shekhar Journal of Materials Science: Materials in Electronics 29, 14501-14507, 2018 | 24 | 2018 |
Study of ZnO/BST interface for thin-film transistor (TFT) applications K Kandpal, N Gupta, J Singh, C Shekhar Surfaces and Interfaces 23, 100996, 2021 | 18 | 2021 |
Study of structural and electrical properties of ZnO thin film for Thin Film Transistor (TFT) applications K Kandpal, N Gupta Journal of Materials Science: Materials in Electronics 28, 16013-16020, 2017 | 17 | 2017 |
Adaptation of a compact SPICE level 3 model for oxide thin-film transistors K Kandpal, N Gupta Journal of Computational Electronics 18 (3), 1037-1044, 2019 | 16 | 2019 |
A high speed-low power comparator with composite cascode pre-amplification for oversampled ADCs K Kandpal, S Varshney, M Goswami Journal of Automation and Control Engineering Vol 1 (4), 2013 | 14 | 2013 |
Mechanical strain and bias-stress compensated, 6T-1C pixel circuit for flexible AMOLED displays A Srivastava, D Dubey, M Goswami, K Kandpal Microelectronics Journal 117, 105266, 2021 | 13 | 2021 |
Dual-quadrant photodetection in topological insulator and silicon-based heterojunction (n-Bi2Te2Se/p-Si) GK Maurya, F Ahmad, S Kumar, V Gautam, K Kandpal, A Tiwari, P Kumar Applied Surface Science 565, 150497, 2021 | 13 | 2021 |
A Low Power, High Speed 1.2 V Dynamic Comparator for Analog-to-Digital Converters S Jakhar, VS Mandloi, R Goswami, K Kandpal Procedia Computer Science 171, 1018-1026, 2020 | 13 | 2020 |
Effect of doping and annealing on thermoelectric properties of bismuth telluride thin films F Ahmad, S Singh, SK Pundir, R Kumar, K Kandpal, P Kumar Journal of Electronic Materials 49, 4195-4202, 2020 | 12 | 2020 |
Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substrate SK Verma, K Kandpal, P Kumar, A Kumar, C Wiemer IEEE Transactions on Electron Devices 69 (8), 4342-4348, 2022 | 11 | 2022 |
Parametric investigation and trap sensitivity of npn double gate TFETs D Deb, R Goswami, RK Baruah, K Kandpal, R Saha Computers and Electrical Engineering 100, 107930, 2022 | 11 | 2022 |
Selection of low dimensional material alternatives to silicon for next generation tunnel field effect transistors P Manocha, K Kandpal, R Goswami Silicon 13, 707-717, 2021 | 11 | 2021 |
Flexible perylenediimide/GaN organic–inorganic hybrid system with exciting optical and interfacial properties R Kumar, SS Kushvaha, M Kumar, MS Kumar, G Gupta, K Kandpal, ... Scientific Reports 10 (1), 10480, 2020 | 10 | 2020 |
Investigation of RF sputtered, n-Bi2Se3 heterojunction on p-Si for enhanced NIR optoelectronic applications V Gautam, S Gautam, GK Maurya, K Kandpal, B Singh, R Ganesan, ... Solar Energy Materials and Solar Cells 248, 112028, 2022 | 9 | 2022 |
Effect of Different Metallic Contacts on the Device Performance of a p-n Heterostructure of a Topological Insulator and Silicon (p-Bi2Te3/n-Si) F Ahmad, K Kandpal, N Kumar, R Kumar, P Kumar IEEE Transactions on Electron Devices 67 (12), 5388-5395, 2020 | 8 | 2020 |
Design of a voltage‐programmed VTH compensating pixel circuit for AMOLED displays using diode‐connected a‐IGZO TFT A Singh, M Goswami, K Kandpal IET Circuits, Devices & Systems 14 (6), 876-880, 2020 | 8 | 2020 |