| Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018 | 143 | 2018 |
| Understanding ferroelectric Al: HfO2 thin films with Si-based electrodes for 3D applications K Florent, S Lavizzari, M Popovici, L Di Piazza, U Celano, G Groeseneken, ... Journal of Applied Physics 121 (20), 2017 | 87 | 2017 |
| First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms, ... 2017 Symposium on VLSI Technology, T158-T159, 2017 | 78 | 2017 |
| Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications K Florent, S Lavizzari, L Di Piazza, M Popovici, J Duan, G Groeseneken, ... IEEE Transactions on Electron Devices 64 (10), 4091-4098, 2017 | 75 | 2017 |
| Analog in-memory computing in FeFET-based 1T1R array for edge AI applications D Saito, T Kobayashi, H Koga, N Ronchi, K Banerjee, Y Shuto, J Okuno, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 45 | 2021 |
| Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019 | 38 | 2019 |
| Investigation of the endurance of FE-HfO2 devices by means of TDDB studies K Florent, A Subirats, S Lavizzari, R Degraeve, U Celano, B Kaczer, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 3-1-6D. 3-7, 2018 | 38 | 2018 |
| Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>102) on/off window, tunable μA-range switching current and … B Govoreanu, L Di Piazza, J Ma, T Conard, A Vanleenhove, A Belmonte, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 30 | 2016 |
| Investigation of imprint in FE-HfO₂ and its recovery Y Higashi, B Kaczer, AS Verhulst, BJ O’Sullivan, N Ronchi, ... IEEE Transactions on Electron Devices 67 (11), 4911-4917, 2020 | 29 | 2020 |
| The flexoelectric effect in Al-doped hafnium oxide U Celano, M Popovici, K Florent, S Lavizzari, P Favia, K Paulussen, ... Nanoscale 10 (18), 8471-8476, 2018 | 24 | 2018 |
| New Insights into the Imprint Effect in FE-HfO2 and its Recovery Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 23 | 2019 |
| First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET Applications S Clima, SRC McMitchell, K Florent, L Nyns, M Popovici, N Ronchi, ... 2018 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2018 | 20 | 2018 |
| Ferroelectricity in Si-doped hafnia: probing challenges in absence of screening charges U Celano, A Gomez, P Piedimonte, S Neumayer, L Collins, M Popovici, ... Nanomaterials 10 (8), 1576, 2020 | 19 | 2020 |
| Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia SRC McMitchell, S Clima, N Ronchi, K Banerjee, U Celano, M Popovici, ... Applied Physics Letters 118 (9), 2021 | 15 | 2021 |
| Enabling CD SEM metrology for 5nm technology node and beyond GF Lorusso, T Ohashi, A Yamaguchi, O Inoue, T Sutani, N Horiguchi, ... Metrology, inspection, and process control for microlithography XXXI 10145 …, 2017 | 15 | 2017 |
| First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application K Banerjee, L Breuil, AP Milenin, M Pak, J Stiers, SRC McMitchell, ... 2021 IEEE International Memory Workshop (IMW), 1-4, 2021 | 13 | 2021 |
| First demonstration of vertically stacked ferroelectric Al doped HfO K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms Proc. Symp. VLSI Technol, T158-T159, 0 | 13 | |
| Cobalt UBM for fine pitch microbump applications in 3DIC J Derakhshandeh, I De Preter, K Vandersmissen, D Dictus, L Di Piazza, ... 2015 IEEE International Interconnect Technology Conference and 2015 IEEE …, 2015 | 10 | 2015 |
| Opportunities and challenges of resistive RAM for neuromorphic applications R Degraeve, A Mallik, D Garbin, J Doevenspeck, A Fantini, D Rodopoulos, ... 2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018 | 4 | 2018 |
| From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration K Florent, S Lavizzari, L Di Piazza, M Popovici, G Potoms, T Raymaekers, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 164-167, 2017 | 4 | 2017 |
