| Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes VK Malyutenko, SS Bolgov, AD Podoltsev Applied Physics Letters 97 (25), 2010 | 123 | 2010 |
| Current crowding in InAsSb light-emitting diodes VK Malyutenko, OY Malyutenko, AD Podoltsev, IN Kucheryavaya, ... Applied Physics Letters 79 (25), 4228-4230, 2001 | 67 | 2001 |
| Negative luminescence of semiconductors P Berdahl, V Malyutenko, T Morimoto Infrared Physics 29 (2-4), 667-672, 1989 | 39 | 1989 |
| Infrared dynamic scene simulating device based on light down-conversion VK Malyutenko, KV Michailovskaya, OY Malyutenko, VV Bogatyrenko, ... IEE Proceedings-Optoelectronics 150 (4), 391-394, 2003 | 36 | 2003 |
| Negative luminescence in semiconductors: a retrospective view VK Malyutenko Physica E: Low-dimensional Systems and Nanostructures 20 (3-4), 553-557, 2004 | 34 | 2004 |
| The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes AV Zinovchuk, OY Malyutenko, VK Malyutenko, AD Podoltsev, AA Vilisov Journal of Applied Physics 104 (3), 2008 | 33 | 2008 |
| Thermal emission of semiconductors: investigation and application VK Malyutenko Infrared physics 32, 291-302, 1991 | 32 | 1991 |
| High temperature (T> 300K) light emitting diodes for 8–12 μm spectral range V Malyutenko, A Melnik, O Malyutenko Infrared physics & technology 41 (6), 373-378, 2000 | 30 | 2000 |
| Room-temperature InAsSbP∕ InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection VK Malyutenko, OY Malyutenko, AV Zinovchuk Applied physics letters 89 (20), 2006 | 29 | 2006 |
| Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs VK Malyutenko, OY Malyutenko, AV Zinovchuk, AL Zakheim, DA Zakheim, ... Fifth International Conference on Solid State Lighting 5941, 319-325, 2005 | 26 | 2005 |
| Bandgap dependence of current crowding effect in 3–5 µm InAsSb/InAs planar light emitting devices VK Malyutenko, AV Zinovchuk, OY Malyutenko Semiconductor Science and Technology 23 (8), 085004, 2008 | 24 | 2008 |
| A new type of IR luminescence VK Malyutenko, SS Bolgov, EI Yablonovsky Infrared Physics 25 (1-2), 115-119, 1985 | 24 | 1985 |
| Synthetic IR signature control using emissivity enhancement techniques VK Malyutenko, OY Malyutenko, VV Bogatyrenko, SV Chyrchyk, ... Technologies for Synthetic Environments: Hardware-in-the-Loop Testing IX …, 2004 | 23 | 2004 |
| Luminescence of semiconductors under carrier deficiency conditions SS Bolgov, VK Malyutenko, VI Pipa SOVIET PHYSICS SEMICONDUCTORS-USSR 17 (2), 134-137, 1983 | 23 | 1983 |
| Above-room-temperature 3–12μm Si emitting arrays VK Malyutenko, SS Bolgov, OY Malyutenko Applied physics letters 88 (21), 2006 | 22 | 2006 |
| Semiconductor screen dynamic visible-to-infrared scene converter VK Malyutenko, VV Bogatyrenko, OY Malyutenko, DR Snyder, AJ Huber, ... Infrared Spaceborne Remote Sensing X 4818, 147-156, 2002 | 22 | 2002 |
| Negative luminescence from InAsSbP-based diodes in the 4.0-to 4.3-um range BA Matveev, M Aydaraliev, NV Zotova, SA Karandashev, MA Remennyi, ... Testing, Reliability, and Applications of Optoelectronic Devices 4285, 109-117, 2001 | 22 | 2001 |
| Research on electrical efficiency degradation influenced by current crowding in vertical blue InGaN-on-SiC light-emitting diodes VK Malyutenko, SS Bolgov, AN Tykhonov IEEE Photonics Technology Letters 24 (13), 1124-1126, 2012 | 21 | 2012 |
| Surface recombination velocity in Si wafers by photoinduced thermal emission V Malyutenko, S Chyrchyk Applied physics letters 89 (5), 2006 | 21 | 2006 |
| Mapping of current and heat flows in IR light-emitting devices and lasers VK Malyutenko Test and Measurement Applications of Optoelectronic Devices 4648, 43-47, 2002 | 21 | 2002 |
Alexander Podoltsev, Oleksandr Podol...Институт электродинамики在 ied.org.ua 的电子邮件经过验证
