| Gate oxide degradation of SiC MOSFET under short-circuit aging tests S Mbarek, F Fouquet, P Dherbécourt, M Masmoudi, O Latry Microelectronics Reliability 64, 415-418, 2016 | 36 | 2016 |
| Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET S Mbarek, P Dherbécourt, O Latry, F Fouquet Microelectronics Reliability 76, 527-531, 2017 | 21 | 2017 |
| Evolution of CV and IV characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests JZ Fu, F Fouquet, M Kadi, P Dherbécourt Microelectronics Reliability 88, 652-655, 2018 | 14 | 2018 |
| Experimental study of 600V GaN transistor under the short-circuit aging tests JZ Fu, F Fouquet, M Kadi, P Dherbécourt 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), 249-253, 2018 | 9 | 2018 |
| Robustness study of SiC MOSFET under harsh electrical and thermal constraints S Mbarek, P Dherbécourt, O Latry, F Fouquet, D Othman, M Berkani, ... Proc. CENICS, 11-15, 2014 | 9 | 2014 |
| Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS) F Zhu, F Fouquet, B Ravelo, A Alaeddine, M Kadi Microelectronics Reliability 53 (9-11), 1288-1292, 2013 | 6 | 2013 |
| Experimental Study and Development of an «EMC-Thermal stress» Test Bench used in Mode Stirred Reverberation Chamber MSRC H Boulzazen, F Fouquet, A Reineix Proc. of 2009 International Workshop EMC'COMPO, 2009 | 4 | 2009 |
| Perturbations induites par un câble de servitude lors de la mesure en cellule TEM-3D A Picard, F Fouquet, A Louis, B Mazari, B Demoulin EMC06, 2006 | 4* | 2006 |
| Noise in Radio-Frequency Electronics and Its Measurement F Fouquet John Wiley & Sons, 2020 | 3 | 2020 |
| Modeling of bundle with radiated losses for bci testing F Duval, B Mazari, O Maurice, F Fouquet, A Louis, T Le Guyader 3rd International Workshop on Electromagnetic Compatibility of Integrated …, 2002 | 3 | 2002 |
| Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests FU Jianzhi International Journal of Information Science and Technology 3 (1), 14-19, 2019 | 2 | 2019 |
| Thermal Modelling for an Electrothermal Model of GaN Devices MA Besserour, S Eloued, JBH Slama, F Fouquet, M Kadi 2021 12th International Renewable Energy Congress (IREC), 1-6, 2021 | 1 | 2021 |
| Aging of GaN GIT under repetitive short-circuit tests JZ Fu, F Fouquet, M Kadi, P Dherbécourt 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018 | 1 | 2018 |
| Electrical predictive model of Zener diode under pulsed EOS F Zhu, B Ravelo, F Fouquet, M Kadi Electronics letters 51 (4), 327-328, 2015 | 1 | 2015 |
| Influence de la Température sur l’Immunité Rayonnée d’un Equipement Automobile en Environnement Réverbérant H Boulzazen, F Fouquet, A Reineix 2EMC Workshop, 2010 | 1* | 2010 |
| Mesures de l’Immunité Rayonnée dans une CRBM avec Prise en Compte de la Température H Boulzazen, F Fouquet, A Reineix Colloque International TELECOM’2009 & 6ème Journées Franco Maghrébines des …, 2009 | 1 | 2009 |
| New Trends For Multiharmonic Source-Pull And Load-Pull Measurements S Leloir, F fouquet, C Tolant, P Eudeline, B Mazari EuMC 2004, 2004 | 1 | 2004 |
| Broadband MMIC Amplifier With Active Matching F Fouquet, JL Gautier, D Pasquet, C Josse 23rd European Microwave Conference, 1993 | 1 | 1993 |
| A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications C Douzi, M Kadi, P Dherbecourt, MA Besserour, E Joubert, F Fouquet Microelectronics Reliability 138, 114777, 2022 | | 2022 |
| PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter H Boulzazen, C Douzi, E Joubert, P Dherbécourt, M Kadi, F Fouquet e-Prime-Advances in Electrical Engineering, Electronics and Energy 2, 100060, 2022 | | 2022 |
