| TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model A Biswas, SS Dan, C Le Royer, W Grabinski, AM Ionescu Microelectronic Engineering 98, 334-337, 2012 | 134 | 2012 |
| A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor WA Vitale, EA Casu, A Biswas, T Rosca, C Alper, A Krammer, GV Luong, ... Scientific reports 7 (1), 355, 2017 | 72 | 2017 |
| Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric A Saeidi, A Biswas, AM Ionescu Solid-State Electronics 124, 16-23, 2016 | 61 | 2016 |
| Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell A Biswas, N Dagtekin, W Grabinski, A Bazigos, CL Royer, JM Hartmann, ... Applied Physics Letters 104 (9), 092108, 2014 | 49 | 2014 |
| 1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design A Biswas, A Ionescu IEEE Journal of the Electron Devices Society, 2014 | 46 | 2014 |
| Hybrid phase-change—Tunnel FET (PC-TFET) switch with subthreshold swing< 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking EA Casu, WA Vitale, N Oliva, T Rosca, A Biswas, C Alper, A Krammer, ... 2016 IEEE International Electron Devices Meeting (IEDM), 19.3. 1-19.3. 4, 2016 | 22 | 2016 |
| An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices L De Michielis, N Dağtekin, A Biswas, L Lattanzio, L Selmi, M Luisier, ... Applied Physics Letters 103 (12), 2013 | 19 | 2013 |
| Benchmarking of homojunction strained-Si NW tunnel FETs for basic analog functions A Biswas, GV Luong, MF Chowdhury, C Alper, QT Zhao, F Udrea, S Mantl, ... IEEE transactions on electron devices 64 (4), 1441-1448, 2017 | 17 | 2017 |
| Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM A Biswas, MA Ionescu Proceedings of the SOI-3D-Subthreshold Microelectronics Technology Unified …, 2014 | 16 | 2014 |
| A novel extraction method and compact model for the steepness estimation of FDSOI TFET lateral junction SS Dan, A Biswas, C Le Royer, W Grabinski, AM Ionescu IEEE electron device letters 33 (2), 140-142, 2011 | 14 | 2011 |
| Method device and operation method of said device A Biswas, N Dagtekin, MA Ionescu US Patent App. 14/507,487, 2015 | 12 | 2015 |
| Compact modeling of DG-Tunnel FET for Verilog-A Implementation A Biswas, L De Michielis, A Bazigos, AM Ionescu IEEE European Solid State Device Research Conference (ESSDERC), 2015 | 12 | 2015 |
| A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms L Lattanzio, A Biswas, L De Michielis, AM Ionescu Applied Physics Letters 98 (12), 2011 | 10 | 2011 |
| Conformal mapping based DC current model for double gate tunnel FETs A Biswas, L De Michielis, C Alper, AM Ionescu 2014 15th International Conference on Ultimate Integration on Silicon (ULIS …, 2014 | 8 | 2014 |
| New tunnel-FET architecture with enhanced ION and improved Miller Effect for energy efficient switching A Biswas, C Alper, L De Michielis, AM Ionescu 70th Device Research Conference, 131-132, 2012 | 8 | 2012 |
| Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms L Lattanzio, L De Michielis, A Biswas, AM Ionescu European Solid State Device Research Conference, 353-356, 2010 | 8 | 2010 |
| Single field effect transistor capacitor-less memory device and method of operating the same A Biswas, N Dagtekin, MA Ionescu US Patent 9,508,854, 2016 | 4 | 2016 |
| Comment on “Investigation of tunnel field-effect transistors as a capacitor-less memory cell”[Appl. Phys. Lett. 104, 092108 (2014)] J Wan, A Zaslavsky, S Cristoloveanu Applied Physics Letters 106 (1), 2015 | 4 | 2015 |
| Behavioral compact models of IGBTs and Si-diodes for data sheet simulations using a machine learning based calibration strategy D Ludwig, G Alia, A Biswas, M Cotorogea PCIM Europe digital days 2020; International Exhibition and Conference for …, 2020 | 3 | 2020 |
| A Capacitance-Voltage model for DG-TFET A Biswas, AM Ionescu Silicon Nanoelectronics Workshop, 2015 | 3 | 2015 |
A.M. IonescuProfessor of Nanoelectronics在 epfl.ch 的电子邮件经过验证
