| Design of a highly efficient 2–4-GHz octave bandwidth GaN-HEMT power amplifier P Saad, C Fager, H Cao, H Zirath, K Andersson IEEE Transactions on Microwave Theory and Techniques 58 (7), 1677-1685, 2010 | 201 | 2010 |
| Symmetrical Doherty power amplifier with extended efficiency range M Özen, K Andersson, C Fager IEEE Transactions on Microwave Theory and Techniques 64 (4), 1273-1284, 2016 | 165 | 2016 |
| Design of a concurrent dual-band 1.8–2.4-GHz GaN-HEMT Doherty power amplifier P Saad, P Colantonio, L Piazzon, F Giannini, K Andersson, C Fager IEEE Transactions on microwave theory and techniques 60 (6), 1840-1849, 2012 | 162 | 2012 |
| Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs I Angelov, K Andersson, D Schreurs, D Xiao, N Rorsman, V Desmaris, ... 2006 Asia-Pacific Microwave Conference, 279-282, 2006 | 117 | 2006 |
| Fabrication and characterization of field-plated buried-gate SiC MESFETs K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ... IEEE electron device letters 27 (7), 573-575, 2006 | 94 | 2006 |
| An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, PÅ Nilsson, ... IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008 | 78 | 2008 |
| An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz P Saad, HM Nemati, M Thorsell, K Andersson, C Fager 2009 European Microwave Conference (EuMC), 496-499, 2009 | 73 | 2009 |
| Analysis of nonlinear distortion in phased array transmitters C Fager, K Hausmair, K Buisman, K Andersson, E Sienkiewicz, ... 2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop …, 2017 | 67 | 2017 |
| An X-band AlGaN/GaN MMIC receiver front-end M Thorsell, M Fagerlind, K Andersson, N Billstrom, N Rorsman IEEE Microwave and Wireless Components Letters 20 (1), 55-57, 2009 | 55 | 2009 |
| Thermal study of the high-frequency noise in GaN HEMTs M Thorsell, K Andersson, M Fagerlind, M Sudow, PA Nilsson, N Rorsman IEEE Transactions on Microwave Theory and Techniques 57 (1), 19-26, 2008 | 55 | 2008 |
| An SiC MESFET-based MMIC process M Sudow, K Andersson, N Billstrom, J Grahn, H Hjelmgren, J Nilsson, ... IEEE transactions on microwave theory and techniques 54 (12), 4072-4078, 2006 | 48 | 2006 |
| Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities M Thorsell, K Andersson IEEE Transactions on Microwave Theory and Techniques 60 (1), 149-157, 2012 | 41 | 2012 |
| A Single-Ended Resistive -Band AlGaN/GaN HEMT MMIC Mixer M Sudow, K Andersson, M Fagerlind, M Thorsell, PA Nilsson, N Rorsman Microwave Theory and Techniques, IEEE Transactions on 56 (10), 2201-2206, 2008 | 40 | 2008 |
| C-band linear resistive wide bandgap FET mixers K Andersson, V Desmaris, J Eriksson, N Rorsman, H Zirath IEEE MTT-S International Microwave Symposium Digest, 2003 2, 1303-1306, 2003 | 38 | 2003 |
| A 24–28-GHz Doherty power amplifier with 4-W output power and 32% PAE at 6-dB OPBO in 150-nm GaN technology M Bao, D Gustafsson, R Hou, Z Ouarch, C Chang, K Andersson IEEE Microwave and Wireless Components Letters 31 (6), 752-755, 2021 | 35 | 2021 |
| Branch-Line Coupler Design Operating in Four Arbitrary Frequencies L Piazzon, P Saad, P Colantonio, F Giannini, K Andersson, C Fager IEEE Microwave and Wireless Components Letters 22 (2), 67-69, 2012 | 35 | 2012 |
| Transient simulation of microwave SiC MESFETs with improved trap models H Hjelmgren, F Allerstam, K Andersson, PÅ Nilsson, N Rorsman IEEE transactions on electron devices 57 (3), 729-732, 2010 | 35 | 2010 |
| A general statistical equivalent-circuit-based de-embedding procedure for high-frequency measurements M Ferndahl, C Fager, K Andersson, P Linner, HO Vickes, H Zirath IEEE Transactions on Microwave Theory and Techniques 56 (12), 2692-2700, 2008 | 34 | 2008 |
| Concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz P Saad, P Colantonio, J Moon, L Piazzon, F Giannini, K Andersson, B Kim, ... WAMICON 2012 IEEE Wireless & Microwave Technology Conference, 1-5, 2012 | 33 | 2012 |
| Electrothermal access resistance model for GaN-based HEMTs M Thorsell, K Andersson, H Hjelmgren, N Rorsman IEEE Transactions on Electron Devices 58 (2), 466-472, 2010 | 33 | 2010 |
Niklas RorsmanResearch Professor, Chalmers University of Technology在 chalmers.se 的电子邮件经过验证
