| Search for carbon nitride CNx compounds with a high nitrogen content by electron cyclotron resonance plasma deposition M Diani, A Mansour, L Kubler, JL Bischoff, D Bolmont Diamond and Related Materials 3 (3), 264-269, 1994 | 90 | 1994 |
| The Ge Stranski-Krastanov growth mode on Si (001)(2× 1) tested by X-ray photoelectron and Auger electron diffraction M Diani, D Aubel, JL Bischoff, L Kubler, D Bolmont Surface science 291 (1-2), 110-116, 1993 | 42 | 1993 |
| Bidimensional intercalation of Ge between SiC (0001) and a heteroepitaxial graphite top layer L Kubler, K Aït-Mansour, M Diani, D Dentel, JL Bischoff, M Derivaz Physical Review B—Condensed Matter and Materials Physics 72 (11), 115319, 2005 | 30 | 2005 |
| A particular epitaxial Si1− yCy alloy growth mode on Si (001) evidenced by cross-sectional transmission electron microscopy A Claverie, J Faure, JL Balladore, L Simon, A Mesli, M Diani, L Kubler, ... Journal of crystal growth 157 (1-4), 420-425, 1995 | 30 | 1995 |
| X-ray photoelectron diffraction observation of β-SiC (001) obtained by electron cyclotron resonance plasma assisted growth on Si (001) M Diani, JL Bischoff, L Kubler, D Bolmont Applied surface science 68 (4), 575-582, 1993 | 27 | 1993 |
| Oxygen vacancies and defects tailored microstructural, optical and electrochemical properties of Gd doped CeO2 nanocrystalline thin films A El-Habib, M Addou, A Aouni, M Diani, J Zimou, M Bouachri, B Brioual, ... Materials Science in Semiconductor Processing 145, 106631, 2022 | 26 | 2022 |
| A First-Principles Investigation on Electronic Structure, Optical and Thermoelectric Properties of Janus In2SeTe Monolayer A Marjaoui, M Zanouni, M Ait Tamerd, A El Kasmi, M Diani Journal of Superconductivity and Novel Magnetism 34 (12), 3279-3290, 2021 | 26 | 2021 |
| Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on M Diani, L Kubler, L Simon, D Aubel, I Matko, B Chenevier Physical Review B 67 (12), 125316, 2003 | 26 | 2003 |
| Strong element dependence of C 1s and Si 2p X-ray photoelectron diffraction profiles for identical C and Si local geometries in β-SiC S Juillaguet, L Kubler, M Diani, JL Bischoff, G Gewinner, P Wetzel, ... Surface science 339 (3), 363-371, 1995 | 23 | 1995 |
| Electronic structure, optical and thermoelectric properties of Ge2SeS monolayer via first-principles study A Marjaoui, MA Tamerd, M Zanouni, A El Kasmi, M Diani Physica E: Low-dimensional Systems and Nanostructures 136, 115022, 2022 | 21 | 2022 |
| Selective thermal—as opposed to non-selective plasma—nitridation of Si Ge related materials examined by in situ photoemission techniques D Aubel, M Diani, L Kubler, JL Bischoff, D Bolmont Journal of non-crystalline solids 187, 319-323, 1995 | 21 | 1995 |
| Crystal growth of 3C–SiC polytype on 6H–SiC (0 0 0 1) substrate M Diani, L Simon, L Kubler, D Aubel, I Matko, B Chenevier, R Madar, ... Journal of crystal growth 235 (1-4), 95-102, 2002 | 19 | 2002 |
| Performance evaluation and analysis of polycrystalline photovoltaic plant located in Northern Morocco R Herbazi, K Amechnoue, A Khouya, A Chahboun, M Diani, M Louzazni, ... International Journal of Ambient Energy 43 (1), 1262-1268, 2022 | 18 | 2022 |
| Study of microstructural, morphological and optical properties of sprayed vanadium doped ZnO nanoparticles H Ftouhi, Z El Jouad, M Jbilou, M Diani, M Addou The European Physical Journal Applied Physics 87 (1), 10301, 2019 | 18 | 2019 |
| Low temperature synthesis of MoS2 and MoO3: MoS2 hybrid thin films via the use of an original hybrid sulfidation technique H Ftouhi, H Lamkaouane, G Louarn, M Diani, JC Bernède, M Addou, ... Surfaces and Interfaces 32, 102120, 2022 | 17 | 2022 |
| Synthesis, structural and optical characteristics of vanadium doped cerium dioxide layers A El-Habib, M Addou, A Aouni, M Diani, J Zimou, H Bakkali Materialia 18, 101143, 2021 | 15 | 2021 |
| Physical properties and electrochemical behavior of thin layers of vanadium doped cerium dioxide A El-Habib, M Addou, A Aouni, J Zimou, M Diani, H Ftouhi, Z El Jouad Surfaces and Interfaces 23, 100906, 2021 | 15 | 2021 |
| Observation of Si out-diffusion related defects in SiC growth on Si (001) M Diani, A Mesli, L Kubler, A Claverie, JL Balladore, D Aubel, S Peyre, ... Materials Science and Engineering: B 29 (1-3), 110-113, 1995 | 15 | 1995 |
| Strict thermal nitridation selectivity between Si and Ge used as a chemical probe of the outermost layer of Si1−xGex alloys and Ge/Si(001) or Si/Ge(001 … D Aubel, M Diani, JL Bischoff, D Bolmont, L Kubler Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 15 | 1994 |
| Synthesis of epitaxial Si1− yCy alloys on Si (001) with high level of non-usual substitutional carbon incorporation M Diani, L Kubler, JL Bischoff, JJ Grob, B Prévot, A Mesli Journal of crystal growth 157 (1-4), 431-435, 1995 | 14 | 1995 |
