关注
Andrew Stollenwerk
Andrew Stollenwerk
Professor of Physics, University of Northern Iowa
在 uni.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Above room temperature ferromagnetism in Mn-ion implanted Si
M Bolduc, C Awo-Affouda, A Stollenwerk, MB Huang, FG Ramos, ...
Physical Review B 71 (3), 033302, 2005
3392005
Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope
MR Hummon, AJ Stollenwerk, V Narayanamurti, PO Anikeeva, MJ Panzer, ...
Physical Review B 81 (11), 115439, 2010
632010
Electronic structure changes of from subsurface Mn observed by STM
MR Krause, AJ Stollenwerk, J Reed, VP LaBella, M Hortamani, P Kratzer, ...
Physical Review B 75 (20), 205326, 2007
342007
Combined molecular beam epitaxy low temperature scanning tunneling microscopy system: Enabling atomic scale characterization of semiconductor surfaces and interfaces
M Krause, A Stollenwerk, C Awo-Affouda, B Maclean, VP LaBella
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
312005
Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures
W Yi, AJ Stollenwerk, V Narayanamurti
Surface Science Reports 64 (5), 169-190, 2009
302009
Ostwald ripening of manganese silicide islands on Si (001)
MR Krause, A Stollenwerk, M Licurse, VP LaBella
Journal of Vacuum Science & Technology A 24 (4), 1480-1483, 2006
232006
Influence of interface coupling on the electronic properties of the Au/MoS 2 junction
M Cook, R Palandech, K Doore, Z Ye, G Ye, R He, AJ Stollenwerk
Physical Review B 92 (20), 201302, 2015
162015
Effect of interface band structure on hot-electron attenuation lengths in Au thin films
AJ Stollenwerk, EJ Spadafora, JJ Garramone, RJ Matyi, RL Moore, ...
Physical Review B 77 (3), 033416, 2008
142008
Investigation of the structural properties of ferromagnetic Mn-implanted Si
M Bolduc, C Awo-Affouda, A Stollenwerk, MB Huang, F Ramos, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006
142006
Three-dimensional quantum size effects on the growth of Au islands on MoS2
TE Kidd, J Weber, R Holzapfel, K Doore, AJ Stollenwerk
Applied Physics Letters 113 (19), 2018
112018
Measurement of the clustering energy for manganese silicide islands on Si (001) by Ostwald ripening
MR Krause, AJ Stollenwerk, M Licurse, VP LaBella
Applied Physics Letters 91 (4), 2007
92007
Chemical substitution induced half-metallicity in CrMnSb (1− x) Px
E O’Leary, A Ramker, D VanBrogen, B Dahal, EJ Montgomery, S Poddar, ...
Journal of Applied Physics 128 (11), 2020
82020
Hot electron transport across manganese silicide layers on the Si (001) surface
AJ Stollenwerk, MR Krause, R Moore, VP LaBella
Journal of Vacuum Science & Technology A 24 (4), 1610-1612, 2006
82006
Measuring spin dependent hot electron transport through a metal-semiconductor interface using spin-polarized ballistic electron emission microscopy
AJ Stollenwerk, MR Krause, JJ Garramone, EJ Spadafora, VP LaBella
Physical Review B 76 (19), 195311, 2007
72007
Probing the hot-electron transport properties and interface band structure of (001) and (001) Schottky diodes
AJ Stollenwerk, MR Krause, DH Idell, R Moore, VP LaBella
Physical Review B 74 (15), 155328, 2006
72006
Ballistic electron transport properties of Fe-based films on Si (001)
AJ Stollenwerk, MR Krause, DH Idell, R Moore, VP LaBella
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
72006
Electronic growth of Pd (111) nanostructures on MoS2
TE Kidd, S Scott, S Roberts, R Carlile, PV Lukashev, AJ Stollenwerk
Journal of Applied Physics 129 (17), 2021
62021
Effect of growth temperature on ballistic electron transport through the Au/Si (001) interface
MW Eckes, BE Friend, AJ Stollenwerk
Journal of Applied Physics 115 (16), 2014
62014
Preparation of ultrathin gold films with subatomic surface roughness
TE Kidd, J Weber, E O’Leary, AJ Stollenwerk
Langmuir 37 (31), 9472-9477, 2021
52021
Self-assembled Ag (111) nanostructures induced by Fermi surface nesting
TE Kidd, E O’Leary, A Anderson, S Scott, AJ Stollenwerk
Physical Review B 100 (23), 235447, 2019
52019
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