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Abdur Rehman Anwar
Abdur Rehman Anwar
Young Researcher at Jozef Stefan Institute, Ljubljana, Slovenia
在 ijs.si 的电子邮件经过验证
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年份
Recent progress in micro‐LED‐based display technologies
AR Anwar, MT Sajjad, MA Johar, CA Hernández‐Gutiérrez, M Usman, ...
Laser & Photonics Reviews 16 (6), 2100427, 2022
1152022
Green gap in GaN-based light-emitting diodes: in perspective
M Usman, M Munsif, U Mushtaq, AR Anwar, N Muhammad
Critical Reviews in Solid State and Materials Sciences 46 (5), 450-467, 2021
392021
Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes
M Usman, M Munsif, AR Anwar
Optics Communications 464, 125493, 2020
242020
Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer
M Usman, M Munsif, AR Anwar, H Jamal, S Malik, NU Islam
Superlattices and Microstructures 139, 106417, 2020
242020
Zigzag-shaped quantum well engineering of green light-emitting diode
M Usman, M Munsif, AR Anwar, U Mushtaq, WA Imtiaz, DP Han, ...
Superlattices and Microstructures 132, 106164, 2019
242019
Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes
M Usman, AR Anwar, M Munsif, S Malik, NU Islam
Superlattices and Microstructures 135, 106271, 2019
232019
Amelioration of internal quantum efficiency of green GaN-based light-emitting diodes by employing variable active region
M Usman, AR Anwar, M Munsif, DP Han, K Saba
Physica E: Low-dimensional Systems and Nanostructures 117, 113826, 2020
142020
Microcavity-and Microlaser-Based Optical Barcoding: A Review of Encoding Techniques and Applications
AR Anwar, M Mur, M Humar
ACS photonics 10 (5), 1202-1224, 2023
122023
Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes
M Usman, U Mushtaq, M Munsif, AR Anwar, M Kamran
Physica Scripta 94 (10), 105808, 2019
102019
Analysis of various electron blocking layers to improve efficiency in green light-emitting diodes
M Usman, AR Anwar, K Saba, M Munsif
Ceramics International 46 (11), 18464-18468, 2020
72020
a survey of simulations on device engineering of GaN-based light-emitting diodes
M Usman, AR Anwar, M Munsif
ECS Journal of Solid State Science and Technology 9 (6), 066002, 2020
62020
High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer
M Usman, M Munsif, AR Anwar
Optical and Quantum Electronics 52, 1-10, 2020
62020
theoretical and computational analysis of a wurtzite-AlGaN DUV-LED to mitigate quantum-confined Stark effect with a zincblende comparison considering Mg-and Be-doping
HI Solís-Cisneros, Y Hu, JL Camas-Anzueto, R Grajales-Coutiño, ...
Nanomaterials 12 (23), 4347, 2022
52022
Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes
AR Anwar, M Usman, M Munsif, K Saba
Materials Science and Engineering: B 271, 115279, 2021
52021
Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer
M Usman, AR Anwar, M Munsif, S Malik, NU Islam, T Jameel
Optical and Quantum Electronics 52, 1-7, 2020
52020
Polarization-induced phase transitions in ultra-thin InGaN-based double quantum wells
SP Łepkowski, AR Anwar
Nanomaterials 12 (14), 2418, 2022
32022
Physical and technological analysis of the AlGaN-based UVC-LED: An extended discussion focused on cubic phase as an alternative for surface disinfection
HI Solís-Cisneros, CA Hernández-Gutiérrez, A Anwar, ...
Revista mexicana de física 68 (2), 2022
32022
Third-order elastic constants and biaxial relaxation coefficient in wurtzite group-III nitrides by hybrid-density functional theory calculations
SP Łepkowski, AR Anwar
Journal of Physics: Condensed Matter 33 (35), 355402, 2021
32021
Hole transport enhancement by thickness-and composition-grading of electron blocking layer
M Usman, M Munsif, AR Anwar, S Malik, NU Islam, S Khan
Optical Engineering 60 (3), 036101-036101, 2021
32021
Droop-free internal quantum efficiency of p-InGaN/p-GaN superlattice electron blocking layer
M Usman, AR Anwar, K Saba, M Munsif
Optik 223, 165514, 2020
32020
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