| Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors L Dobaczewski, AR Peaker, K Bonde Nielsen Journal of applied physics 96 (9), 4689-4728, 2004 | 375 | 2004 |
| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 298 | 2018 |
| Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors L Dobaczewski, P Kaczor, ID Hawkins, AR Peaker Journal of applied physics 76 (1), 194-198, 1994 | 286 | 1994 |
| Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device AM Song, M Missous, P Omling, AR Peaker, L Samuelson, W Seifert Applied Physics Letters 83 (9), 1881-1883, 2003 | 263 | 2003 |
| Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi VP Markevich, ID Hawkins, AR Peaker, KV Emtsev, VV Emtsev, ... Physical Review B—Condensed Matter and Materials Physics 70 (23), 235213, 2004 | 147 | 2004 |
| Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors AR Peaker, VP Markevich, J Coutinho Journal of Applied Physics 123 (16), 2018 | 120 | 2018 |
| Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald physica status solidi (RRL)–Rapid Research Letters 10 (6), 443-447, 2016 | 109 | 2016 |
| Detection of minority-carrier traps using transient spectroscopy R Brunwin, B Hamilton, P Jordan, AR Peaker Electronics letters 12 (15), 349-350, 1979 | 102 | 1979 |
| Deep‐state‐controlled minority‐carrier lifetime in n‐type gallium phosphide B Hamilton, AR Peaker, DR Wight Journal of Applied Physics 50 (10), 6373-6385, 1979 | 97 | 1979 |
| Recombination processes in erbium-doped MBE silicon H Efeoglu, JH Evans, TE Jackman, B Hamilton, DC Houghton, JM Langer, ... Semiconductor science and technology 8 (2), 236, 1993 | 96 | 1993 |
| Electronic properties of antimony-vacancy complex in Ge crystals VP Markevich, AR Peaker, VV Litvinov, VV Emtsev, LI Murin Journal of Applied Physics 95 (8), 4078-4083, 2004 | 92 | 2004 |
| Defect reactions associated with divacancy elimination in silicon VP Markevich, AR Peaker, SB Lastovskii, LI Murin, JL Lindström Journal of Physics: Condensed Matter 15 (39), S2779, 2003 | 92 | 2003 |
| Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs I Poole, KE Singer, AR Peaker, AC Wright Journal of crystal growth 121 (1-2), 121-131, 1992 | 92 | 1992 |
| Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ... physica status solidi (a) 213 (11), 2844-2849, 2016 | 88 | 2016 |
| Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ... Physical Review B—Condensed Matter and Materials Physics 80 (23), 235207, 2009 | 86 | 2009 |
| Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon RH Wu, AR Peaker Solid-State Electronics 25 (7), 643-649, 1982 | 85 | 1982 |
| Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in As L Dobaczewski, P Kaczor, M Missous, AR Peaker, Z Żytkiewicz Physical review letters 68 (16), 2508, 1992 | 84 | 1992 |
| Electronic properties of vacancy–oxygen complex in Ge crystals VP Markevich, ID Hawkins, AR Peaker, VV Litvinov, LI Murin, ... Applied Physics Letters 81 (10), 1821-1823, 2002 | 78 | 2002 |
| Coexistence of deep levels with optically active InAs quantum dots SW Lin, C Balocco, M Missous, AR Peaker, AM Song Physical Review B—Condensed Matter and Materials Physics 72 (16), 165302, 2005 | 75 | 2005 |
| Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect CZ Zhao, JF Zhang, MH Chang, AR Peaker, S Hall, G Groeseneken, ... IEEE Transactions on Electron Devices 55 (7), 1647-1656, 2008 | 68 | 2008 |
V.P. MarkevichUniversity of Manchester在 manchester.ac.uk 的电子邮件经过验证
