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Dimosthenis Peftitsis
Dimosthenis Peftitsis
Professor of Power Electronics at NTNU, Norwegian University of Science and Technology
在 ntnu.no 的电子邮件经过验证 - 首页
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引用次数
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年份
Silicon carbide power transistors: A new era in power electronics is initiated
J Rabkowski, D Peftitsis, HP Nee
IEEE Industrial Electronics Magazine 6 (2), 17-26, 2012
4652012
High-power modular multilevel converters with SiC JFETs
D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ...
IEEE Transactions on Power Electronics 27 (1), 28-36, 2011
2302011
Short-circuit protection circuits for silicon-carbide power transistors
DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ...
IEEE transactions on industrial electronics 63 (4), 1995-2004, 2015
1852015
Challenges regarding parallel connection of SiC JFETs
D Peftitsis, R Baburske, J Rabkowski, J Lutz, G Tolstoy, HP Nee
IEEE Transactions on Power Electronics 28 (3), 1449-1463, 2012
1452012
Gate and base drivers for silicon carbide power transistors: An overview
D Peftitsis, J Rabkowski
IEEE Transactions on Power Electronics 31 (10), 7194-7213, 2015
1262015
Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs
DP Sadik, J Colmenares, D Peftitsis, JK Lim, J Rabkowski, HP Nee
2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013
1072013
Low-loss high-performance base-drive unit for SiC BJTs
J Rabkowski, G Tolstoy, D Peftitsis, HP Nee
IEEE Transactions on Power Electronics 27 (5), 2633-2643, 2011
1072011
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee
IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015
742015
Parallel-operation of discrete SiC BJTs in a 6-kW/250-kHz DC/DC boost converter
J Rabkowski, D Peftitsis, HP Nee
IEEE transactions on power electronics 29 (5), 2482-2491, 2013
712013
MVDC distribution grids and potential applications: Future trends and protection challenges
A Giannakis, D Peftitsis
2018 20th european conference on power electronics and applications (EPE'18 …, 2018
682018
An experimental evaluation of SiC switches in soft-switching converters
P Ranstad, HP Nee, J Linner, D Peftitsis
IEEE Transactions on Power Electronics 29 (5), 2527-2538, 2013
632013
Design steps toward a 40-kVA SiC JFET inverter with natural-convection cooling and an efficiency exceeding 99.5%
J Rabkowski, D Peftitsis, HP Nee
IEEE Transactions on Industry Applications 49 (4), 1589-1598, 2013
592013
Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs
JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee
IEEE Transactions on Power Electronics 29 (5), 2180-2191, 2013
562013
Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%
J Rabkowski, D Peftitsis, HP Nee
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012
562012
Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply
D Peftitsis, J Rabkowski, HP Nee
IEEE Transactions on Power Electronics 28 (3), 1488-1501, 2012
542012
On the design process of a 6-kVA quasi-Z-inverter employing SiC power devices
M Zdanowski, D Peftitsis, S Piasecki, J Rabkowski
IEEE Transactions on Power Electronics 31 (11), 7499-7508, 2016
462016
Auxiliary power supply for medium-voltage modular multilevel converters
D Peftitsis, M Antivachis, J Biela
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
452015
Optimized design of multi-MHz frequency isolated auxiliary power supply for gate drivers in medium-voltage converters
OC Spro, P Lefranc, S Park, JM Rivas-Davila, D Peftitsis, OM Midtgård, ...
IEEE Transactions on Power Electronics 35 (9), 9494-9509, 2020
432020
High gain DC–AC high-frequency link inverter with improved quasi-resonant modulation
A Blinov, O Korkh, A Chub, D Vinnikov, D Peftitsis, S Norrga, I Galkin
IEEE Transactions on Industrial Electronics 69 (2), 1465-1476, 2021
412021
A discretized proportional base driver for silicon carbide bipolar junction transistors
G Tolstoy, D Peftitsis, J Rabkowski, PR Palmer, HP Nee
IEEE Transactions on Power Electronics 29 (5), 2408-2417, 2013
382013
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