A SPICE-compatible model of MOS-type graphene nano-ribbon field-effect transistors enabling gate-and circuit-level delay and power analysis under process variation YY Chen, A Sangai, A Rogachev, M Gholipour, G Iannaccone, G Fiori, ... IEEE Transactions on Nanotechnology 14 (6), 1068-1082, 2015 | 84 | 2015 |
Highly accurate SPICE-compatible modeling for single-and double-gate GNRFETs with studies on technology scaling M Gholipour, YY Chen, A Sangai, D Chen 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2014 | 59 | 2014 |
Analytical SPICE-compatible model of Schottky-barrier-type GNRFETs with performance analysis M Gholipour, YY Chen, A Sangai, N Masoumi, D Chen IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (2), 650-663, 2015 | 56 | 2015 |
A reliable low standby power 10T SRAM cell with expanded static noise margins E Abbasian, F Izadinasab, M Gholipour IEEE Transactions on Circuits and Systems I: Regular Papers 69 (4), 1606-1616, 2022 | 44 | 2022 |
Graphene nano-ribbon field-effect transistors as future low-power devices YY Chen, A Sangai, M Gholipour, D Chen International Symposium on Low Power Electronics and Design (ISLPED), 151-156, 2013 | 41 | 2013 |
A variation-aware design for storage cells using Schottky-barrier-type GNRFETs E Abbasian, M Gholipour Journal of Computational Electronics 19, 987-1001, 2020 | 34 | 2020 |
Design of a Schmitt-trigger-based 7T SRAM cell for variation resilient low-energy consumption and reliable internet of things applications E Abbasian, M Gholipour AEU-International Journal of Electronics and Communications 138, 153899, 2021 | 31 | 2021 |
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM E Abbasian, S Birla, M Gholipour Microelectronics Journal 123, 105427, 2022 | 30 | 2022 |
Schottky-barrier-type graphene nano-ribbon field-effect transistors: A study on compact modeling, process variation, and circuit performance YY Chen, A Sangai, M Gholipour, D Chen 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013 | 29 | 2013 |
Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications E Abbasian, M Gholipour International Journal of Circuit Theory and Applications 49 (4), 970-989, 2021 | 28 | 2021 |
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology E Abbasian, M Gholipour, S Birla Arabian Journal for Science and Engineering 47 (11), 14543-14559, 2022 | 26 | 2022 |
A comprehensive analysis of different SRAM cell topologies in 7-nm FinFET technology E Abbasian, S Birla, M Gholipour Silicon, 1-12, 2021 | 24 | 2021 |
Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures M Gholipour, N Masoumi Microelectronics Journal 44 (3), 190-200, 2013 | 24 | 2013 |
Asymmetric gate Schottky-barrier graphene nanoribbon FETs for low-power design M Gholipour, N Masoumi, YYC Chen, D Chen, M Pourfath IEEE Transactions on Electron Devices 61 (12), 4000-4006, 2014 | 23 | 2014 |
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology E Abbasian, E Mani, M Gholipour, M Karamimanesh, M Sahid, A Zaidi Circuits, Systems, and Signal Processing 41 (6), 3081-3105, 2022 | 22 | 2022 |
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design E Abbasian, M Gholipour, F Izadinasab International Journal of Circuit Theory and Applications 49 (11), 3630-3652, 2021 | 20 | 2021 |
Design and implementation of lifting based integer wavelet transform for image compression applications M Gholipour Digital Information and Communication Technology and Its Applications …, 2011 | 17 | 2011 |
Design space exploration of low-power flip-flops in FinFET technology E Mahmoodi, M Gholipour Integration 75, 52-62, 2020 | 16 | 2020 |
A compact short-channel model for symmetric double-gate TMDFET in subthreshold region M Gholipour IEEE Transactions on Electron Devices 64 (8), 3466-3469, 2017 | 16 | 2017 |
Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects M Gholipour, N Masoumi IET circuits, devices & systems 6 (4), 252-259, 2012 | 16 | 2012 |