| Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs M Luysberg, H Sohn, A Prasad, P Specht, Z Liliental-Weber, ER Weber, ... Journal of applied physics 83 (1), 561-566, 1998 | 165 | 1998 |
| Structural and optical properties of vertically aligned InP quantum dots MK Zundel, P Specht, K Eberl, NY Jin-Phillipp, F Phillipp Applied physics letters 71 (20), 2972-2974, 1997 | 161 | 1997 |
| High-resolution in situ and ex situ TEM studies on graphene formation and growth on Pt nanoparticles Z Peng, F Somodi, S Helveg, C Kisielowski, P Specht, AT Bell Journal of Catalysis 286, 22-29, 2012 | 136 | 2012 |
| Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs M Haiml, U Siegner, F Morier-Genoud, U Keller, M Luysberg, P Specht, ... Applied physics letters 74 (9), 1269-1271, 1999 | 104 | 1999 |
| Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies M Haiml, U Siegner, F Morier-Genoud, U Keller, M Luysberg, RC Lutz, ... Applied physics letters 74 (21), 3134-3136, 1999 | 101 | 1999 |
| Real-time sub-ngstrom imaging of reversible and irreversible conformations in rhodium catalysts and graphene C Kisielowski, LW Wang, P Specht, HA Calderon, B Barton, B Jiang, ... Physical Review B—Condensed Matter and Materials Physics 88 (2), 024305, 2013 | 75 | 2013 |
| Distortion and segregation in a dislocation core region at atomic resolution X Xu, SP Beckman, P Specht, ER Weber, DC Chrzan, RP Erni, I Arslan, ... Physical review letters 95 (14), 145501, 2005 | 67 | 2005 |
| Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy P Specht, JC Ho, X Xu, R Armitage, ER Weber, R Erni, C Kisielowski Solid state communications 135 (5), 340-344, 2005 | 66 | 2005 |
| Observing gas-catalyst dynamics at atomic resolution and single-atom sensitivity S Helveg, CF Kisielowski, JR Jinschek, P Specht, G Yuan, H Frei Micron 68, 176-185, 2015 | 64 | 2015 |
| Defect identification in GaAs grown at low temperatures by positron annihilation J Gebauer, F Börner, R Krause-Rehberg, TEM Staab, ... Journal of Applied Physics 87 (12), 8368-8379, 2000 | 56 | 2000 |
| Discovering Hidden Material Properties of MgCl2 at Atomic Resolution with Structured Temporal Electron Illumination of Picosecond Time Resolution C Kisielowski, P Specht, B Freitag, ER Kieft, W Verhoeven, JFM van Rens, ... Advanced Functional Materials 29 (11), 1807818, 2019 | 50 | 2019 |
| Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ... Applied physics letters 107 (8), 2015 | 49 | 2015 |
| Phase separation in In x Ga1− x N TP Bartel, P Specht, JC Ho, C Kisielowski Philosophical Magazine 87 (13), 1983-1998, 2007 | 49 | 2007 |
| The influence of structural properties on conductivity and luminescence of MBE grown InN P Specht, R Armitage, J Ho, E Gunawan, Q Yang, X Xu, C Kisielowski, ... Journal of crystal growth 269 (1), 111-118, 2004 | 48 | 2004 |
| Analysis of twin defects in GaAs (111) B molecular beam epitaxy growth Y Park, MJ Cich, R Zhao, P Specht, ER Weber, E Stach, S Nozaki Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 48 | 2000 |
| Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C P Specht, RC Lutz, R Zhao, ER Weber, WK Liu, K Bacher, FJ Towner, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 45 | 1999 |
| Atomic resolution phase contrast imaging and in-line holography using variable voltage and dose rate B Barton, B Jiang, CY Song, P Specht, H Calderon, C Kisielowski Microscopy and Microanalysis 18 (5), 982-994, 2012 | 44 | 2012 |
| Constricted dislocations and their use for TEM measurements of the velocities of edge and 60° dislocations in silicon. A new approach to the problem of kink migration H Gottschalk, N Hiller, S Sauerland, P Specht, H Alexander physica status solidi (a) 138 (2), 547-555, 1993 | 44 | 1993 |
| Defect control in As-rich GaAs P Specht, S Jeong, H Sohn, M Luysberg, A Prasad, J Gebauer, ... Materials Science Forum 258, 951-956, 1997 | 43 | 1997 |
| Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ... IEEE Electron Device Letters 35 (12), 1194-1196, 2014 | 41 | 2014 |
