| Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits ML Green, EP Gusev, R Degraeve, EL Garfunkel Journal of Applied Physics 90 (5), 2057-2121, 2001 | 1018 | 2001 |
| Structure and stability of ultrathin zirconium oxide layers on Si (001) M Copel, M Gribelyuk, E Gusev Applied Physics Letters 76 (4), 436-438, 2000 | 951 | 2000 |
| High-resolution depth profiling in ultrathin films on Si EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk Applied Physics Letters 76 (2), 176-178, 2000 | 518 | 2000 |
| Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ... Microelectronic Engineering 59 (1-4), 341-349, 2001 | 508 | 2001 |
| High performance CMOS fabricated on hybrid substrate with different crystal orientations M Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ... IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 2003 | 429 | 2003 |
| Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications EP Gusev, C Cabral Jr, M Copel, C D’emic, M Gribelyuk Microelectronic Engineering 69 (2-4), 145-151, 2003 | 405 | 2003 |
| Intermixing at the tantalum oxide/silicon interface in gate dielectric structures GB Alers, DJ Werder, Y Chabal, HC Lu, EP Gusev, E Garfunkel, ... Applied Physics Letters 73 (11), 1517-1519, 1998 | 402 | 1998 |
| Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 390 | 2001 |
| Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges EP Gusev, V Narayanan, MM Frank IBM Journal of Research and Development 50 (4.5), 387-410, 2006 | 389 | 2006 |
| Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti Journal of Applied physics 93 (11), 9298-9303, 2003 | 387 | 2003 |
| Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks S Zafar, A Kumar, E Gusev, E Cartier IEEE Transactions on Device and Materials Reliability 5 (1), 45-64, 2005 | 354 | 2005 |
| Growth and characterization of ultrathin nitrided silicon oxide films EP Gusev, HC Lu, EL Garfunkel, T Gustafsson, ML Green IBM journal of research and development 43 (3), 265-286, 1999 | 279 | 1999 |
| Growth mechanism of thin silicon oxide films on Si (100) studied by medium-energy ion scattering EP Gusev, HC Lu, T Gustafsson, E Garfunkel Physical Review B 52 (3), 1759, 1995 | 254 | 1995 |
| Germanium channel MOSFETs: Opportunities and challenges H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong IBM Journal of Research and Development 50 (4.5), 377-386, 2006 | 245 | 2006 |
| Hybrid-orientation technology (HOT): Opportunities and challenges M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ... IEEE Transactions on Electron Devices 53 (5), 965-978, 2006 | 222 | 2006 |
| Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics M Yang, EP Gusev, M Ieong, O Gluschenkov, DC Boyd, KK Chan, ... IEEE Electron Device Letters 24 (5), 339-341, 2003 | 203 | 2003 |
| Field effect devices and capacitors with improved thin film dielectrics and method for making same D Brasen, EL Garfunkel, ML Green, EP Gusev US Patent 5,861,651, 1999 | 187 | 1999 |
| Robustness of ultrathin aluminum oxide dielectrics on Si (001) M Copel, E Cartier, EP Gusev, S Guha, N Bojarczuk, M Poppeller Applied Physics Letters 78 (18), 2670-2672, 2001 | 174 | 2001 |
| Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge (100) EP Gusev, H Shang, M Copel, M Gribelyuk, C D’emic, P Kozlowski, ... Applied physics letters 85 (12), 2334-2336, 2004 | 149 | 2004 |
| 80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 147 | 2000 |
Matt CopelIBM TJ Watson Research Center在 us.ibm.com 的电子邮件经过验证
