| Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ... Applied Physics Letters 106 (23), 2015 | 251 | 2015 |
| Vertical III–V nanowire device integration on Si (100) M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ... Nano letters 14 (4), 1914-1920, 2014 | 177 | 2014 |
| InAs–Si nanowire heterojunction tunnel FETs KE Moselund, H Schmid, C Bessire, MT Bjork, H Ghoneim, H Riel IEEE Electron Device Letters 33 (10), 1453-1455, 2012 | 167 | 2012 |
| High-speed III-V nanowire photodetector monolithically integrated on Si S Mauthe, Y Baumgartner, M Sousa, Q Ding, MD Rossell, A Schenk, ... Nature communications 11 (1), 4565, 2020 | 156 | 2020 |
| Si–InAs heterojunction Esaki tunnel diodes with high current densities MT Björk, H Schmid, CD Bessire, KE Moselund, H Ghoneim, S Karg, ... Applied Physics Letters 97 (16), 2010 | 127 | 2010 |
| Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon V Pott, KE Moselund, D Bouvet, L De Michielis, AM Ionescu IEEE transactions on nanotechnology 7 (6), 733-744, 2008 | 91 | 2008 |
| Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016 | 89 | 2016 |
| A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon C Convertino, CB Zota, H Schmid, D Caimi, L Czornomaz, AM Ionescu, ... nature electronics 4 (2), 162-170, 2021 | 78 | 2021 |
| Room-temperature lasing from monolithically integrated GaAs microdisks on silicon S Wirths, BF Mayer, H Schmid, M Sousa, J Gooth, H Riel, KE Moselund ACS nano 12 (3), 2169-2175, 2018 | 72 | 2018 |
| Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si M Borg, H Schmid, KE Moselund, D Cutaia, H Riel Journal of Applied Physics 117 (14), 2015 | 70 | 2015 |
| High-mobility GaSb nanostructures cointegrated with InAs on Si M Borg, H Schmid, J Gooth, MD Rossell, D Cutaia, M Knoedler, ... ACS nano 11 (3), 2554-2560, 2017 | 69 | 2017 |
| Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High-Gate Dielectric KE Moselund, MT Bjork, H Schmid, H Ghoneim, S Karg, E Lortscher, ... IEEE transactions on electron devices 58 (9), 2911-2916, 2011 | 69 | 2011 |
| InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs H Riel, KE Moselund, C Bessire, MT Björk, A Schenk, H Ghoneim, ... 2012 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2012 | 67 | 2012 |
| Ballistic one-dimensional InAs nanowire cross-junction interconnects J Gooth, M Borg, H Schmid, V Schaller, S Wirths, K Moselund, M Luisier, ... Nano letters 17 (4), 2596-2602, 2017 | 63 | 2017 |
| III–V heterostructure tunnel field-effect transistor C Convertino, CB Zota, H Schmid, AM Ionescu, KE Moselund Journal of Physics: Condensed Matter 30 (26), 264005, 2018 | 61 | 2018 |
| Complementary III–V heterojunction lateral NW tunnel FET technology on Si D Cutaia, KE Moselund, H Schmid, M Borg, A Olziersky, H Riel 2016 IEEE Symposium on VlSI Technology, 1-2, 2016 | 60 | 2016 |
| Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, ... 2007 IEEE International Electron Devices Meeting, 191-194, 2007 | 60 | 2007 |
| Scaled resistively-coupled VO2 oscillators for neuromorphic computing E Corti, B Gotsmann, K Moselund, AM Ionescu, J Robertson, S Karg Solid-state electronics 168, 107729, 2020 | 57 | 2020 |
| Waveguide coupled III-V photodiodes monolithically integrated on Si P Wen, P Tiwari, S Mauthe, H Schmid, M Sousa, M Scherrer, M Baumann, ... Nature Communications 13 (1), 909, 2022 | 56 | 2022 |
| Punch-through impact ionization MOSFET (PIMOS): From device principle to applications KE Moselund, D Bouvet, V Pott, C Meinen, M Kayal, AM Ionescu Solid-state electronics 52 (9), 1336-1344, 2008 | 50 | 2008 |
Heinz SchmidIBM Research在 zurich.ibm.com 的电子邮件经过验证
