| Time-varying data processing with nonvolatile memristor-based temporal kernel YH Jang, W Kim, J Kim, KS Woo, HJ Lee, JW Jeon, SK Shim, J Han, ... Nature communications 12 (1), 5727, 2021 | 53 | 2021 |
| Probabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors KS Woo, J Kim, J Han, W Kim, YH Jang, CS Hwang Nature Communications 13 (1), 5762, 2022 | 42 | 2022 |
| A true random number generator using threshold‐switching‐based memristors in an efficient circuit design KS Woo, Y Wang, J Kim, Y Kim, YJ Kwon, JH Yoon, W Kim, CS Hwang Advanced Electronic Materials 5 (2), 1800543, 2019 | 41 | 2019 |
| A combination of a volatile‐memristor‐based true random‐number generator and a nonlinear‐feedback shift register for high‐speed encryption KS Woo, Y Wang, Y Kim, J Kim, W Kim, CS Hwang Advanced Electronic Materials 6 (5), 1901117, 2020 | 35 | 2020 |
| A High‐Speed True Random Number Generator Based on a CuxTe1−x Diffusive Memristor KS Woo, J Kim, J Han, JM Choi, W Kim, CS Hwang Advanced Intelligent Systems 3 (7), 2100062, 2021 | 34 | 2021 |
| Atomic layer deposition of GeSe films using HGeCl3 and [(CH3) 3Si] 2Se with the discrete feeding method for the ovonic threshold switch W Kim, S Yoo, C Yoo, ES Park, J Jeon, YJ Kwon, KS Woo, HJ Kim, ... Nanotechnology 29 (36), 365202, 2018 | 25 | 2018 |
| Electroforming-free bipolar resistive switching in GeSe thin films with a Ti-containing electrode W Kim, C Yoo, ES Park, M Ha, JW Jeon, GS Kim, KS Woo, YK Lee, ... ACS applied materials & interfaces 11 (42), 38910-38920, 2019 | 15 | 2019 |
| Area‐Type Electronic Bipolar Resistive Switching of Pt/Al2O3/Si3N3.0/Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics DE Kwon, J Kim, YJ Kwon, KS Woo, JH Yoon, CS Hwang physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000209, 2020 | 10 | 2020 |
| Graph Analysis with Multifunctional Self‐Rectifying Memristive Crossbar Array YH Jang, J Han, J Kim, W Kim, KS Woo, J Kim, CS Hwang Advanced Materials 35 (10), 2209503, 2023 | 8 | 2023 |
| Hardware‐based security: a combination of a volatile‐memristor‐based true random‐number generator and a nonlinear‐feedback shift register for high‐speed encryption (Adv … KS Woo, Y Wang, Y Kim, J Kim, W Kim, CS Hwang Advanced Electronic Materials 6 (5), 2070022, 2020 | 4 | 2020 |
| Bipolar resistive switching property of Si 3 N 4− x thin films depending on N deficiency DE Kwon, Y Kim, HJ Kim, YJ Kwon, KS Woo, JH Yoon, CS Hwang Journal of Materials Chemistry C 8 (5), 1755-1761, 2020 | 4 | 2020 |
| Spatiotemporal Data Processing with Memristor Crossbar‐Array‐Based Graph Reservoir YH Jang, SH Lee, J Han, W Kim, SK Shim, S Cheong, KS Woo, JK Han, ... Advanced Materials 36 (7), 2309314, 2024 | 3 | 2024 |
| Tunable stochastic memristors for energy-efficient encryption and computing KS Woo, J Han, S Yi, L Thomas, H Park, S Kumar, CS Hwang Nature Communications 15 (1), 3245, 2024 | 2 | 2024 |
| A ternary gate-connected threshold switching thin-film transistor KS Woo, Y Lee, JK Han, TW Park, YH Jang, CS Hwang Applied Physics Letters 124 (15), 2024 | 2 | 2024 |
| Heterogeneous reservoir computing in second-order Ta 2 O 5/HfO 2 memristors N Ghenzi, TW Park, SS Kim, HJ Kim, YH Jang, KS Woo, CS Hwang Nanoscale Horizons, 2024 | 2 | 2024 |
| True random number generation using the spin crossover in LaCoO3 KS Woo, A Zhang, A Arabelo, TD Brown, M Park, AA Talin, EJ Fuller, ... Nature Communications 15 (1), 4656, 2024 | 1 | 2024 |
| Fully CMOS‐Based p‐Bits with a Bistable Resistor for Probabilistic Computing J Kim, JK Han, HY Maeng, J Han, JW Jeon, YH Jang, KS Woo, YK Choi, ... Advanced Functional Materials, 2307935, 2024 | 1 | 2024 |
| Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing KS Woo, H Park, N Ghenzi, AA Talin, T Jeong, JH Choi, S Oh, YH Jang, ... ACS Nano, 2024 | | 2024 |
| 2Memristor‐1Capacitor Integrated Temporal Kernel for High‐Dimensional Data Mapping SK Shim, YH Jang, J Han, JW Jeon, DH Shin, YR Kim, JK Han, KS Woo, ... Small, 2306585, 2024 | | 2024 |
| Implementation of Bayesian networks and Bayesian inference using a Cu 0.1 Te 0.9/HfO 2/Pt threshold switching memristor IK Baek, SH Lee, YH Jang, H Park, J Kim, S Cheong, SK Shim, J Han, ... Nanoscale Advances 6 (11), 2892-2902, 2024 | | 2024 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National University在 snu.ac.kr 的电子邮件经过验证
