High Mobility WSe2 p-and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ... Nano letters 16 (6), 3594–3601, 2014 | 518 | 2014 |
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ... Nano letters 16 (3), 1896-1902, 2016 | 437 | 2016 |
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ... ACS nano 7 (5), 4449-4458, 2013 | 397 | 2013 |
Polarized photocurrent response in black phosphorus field-effect transistors Tu Hong, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian ... Nanoscale 6, 8978-8983, 2014 | 373 | 2014 |
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire, Hsun-Jen Chuang, Meeghage ... acs nano 8 (5), 5079–5088, 2014 | 236 | 2014 |
Anisotropic photocurrent response at black phosphorus–MoS 2 p–n heterojunctions T Hong, B Chamlagain, T Wang, HJ Chuang, Z Zhou, YQ Xu Nanoscale 7 (44), 18537-18541, 2015 | 147 | 2015 |
Plasmonic Hot Electron Induced Photocurrent Response at MoS2–Metal Junctions T Hong, B Chamlagain, S Hu, SM Weiss, Z Zhou, YQ Xu Acs Nano 9 (5), 5357-5363, 2015 | 114 | 2015 |
Thermally oxidized 2D TaS2 as a high-κ gate dielectric for MoS2 field-effect transistors B Chamlagain, Q Cui, S Paudel, MMC Cheng, PY Chen, Z Zhou 2D Materials 4 (3), 031002, 2017 | 73 | 2017 |
Visualizing light scattering in silicon waveguides with black phosphorus photodetectors T Wang, S Hu, B Chamlagain, T Hong, Z Zhou, SM Weiss, YQ Xu Advanced Materials 28 (33), 7162-7166, 2016 | 39 | 2016 |
Scalable lateral heterojunction by chemical doping of 2D TMD thin films B Chamlagain, SS Withanage, AC Johnston, SI Khondaker Scientific Reports 10 (1), 12970, 2020 | 35 | 2020 |
Gate‐Tunable Photoresponse Time in Black Phosphorus–MoS2 Heterojunctions TS Walmsley, B Chamlagain, U Rijal, T Wang, Z Zhou, YQ Xu Advanced Optical Materials 7 (5), 1800832, 2019 | 26 | 2019 |
Low pressure sulfurization and characterization of multilayer MoS2 for potential applications in supercapacitors S Ghosh, SS Withanage, B Chamlagain, SI Khondaker, S Harish, ... Energy 203, 117918, 2020 | 24 | 2020 |
Ultrathin and atomically flat transition-metal oxide: Promising building blocks for metal–insulator electronics Q Cui, M Sakhdari, B Chamlagain, HJ Chuang, Y Liu, MMC Cheng, ... ACS Applied Materials & Interfaces 8 (50), 34552-34558, 2016 | 22 | 2016 |
Electrical properties tunability of large area MoS2 thin films by oxygen plasma treatment B Chamlagain, SI Khondaker Applied Physics Letters 116 (22), 2020 | 15 | 2020 |
Charge Transfer Doping of 2D PdSe2 Thin Film and Its Application in Fabrication of Heterostructures Sajeevi S. Withanage, Bhim Chamlagain, Ammon C. Johnston, Saiful I. Khondaker Advanced Electronic Materials, 2001057, 2021 | 9* | 2021 |
Rapid Degradation of the Electrical Properties of 2D MoS2 Thin Films under Long-Term Ambient Exposure B Chamlagain, SI Khondaker ACS omega 6 (37), 24075-24081, 2021 | 8 | 2021 |
M-Ch Cheng M, Yan J, Mandrus D, Tománek D and Zhou Z 2014 HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain Nano Lett 14, 3594, 0 | 7 | |
Synthesis of highly dense MoO2/MoS2 core–shell nanoparticles via chemical vapor deposition SS Withanage, V Charles, B Chamlagain, R Wheeler, S Mou, ... Nanotechnology 32 (5), 055605, 2020 | 3 | 2020 |
Tailoring the Potential Landscape and Electrical Properties of 2D MoS2 using Gold Nanostructures of Different Coverage Density B Chamlagain, U Bhanu, S Mou, SI Khondaker The Journal of Physical Chemistry C 124 (11), 6461-6466, 2020 | 3 | 2020 |
Scalable lateral heterojunction by chemical doping of 2D TMD thin films C Bhim, SS Withanage, AC Johnston, SI Khondaker Scientific Reports (Nature Publisher Group) 10 (1), 2020 | | 2020 |