| Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ... Microelectronic Engineering 187, 66-77, 2018 | 432 | 2018 |
| Ion irradiation and defect formation in single layer graphene G Compagnini, F Giannazzo, S Sonde, V Raineri, E Rimini Carbon 47 (14), 3201-3207, 2009 | 272 | 2009 |
| Barrier inhomogeneity and electrical properties of Pt∕ GaN Schottky contacts F Iucolano, F Roccaforte, F Giannazzo, V Raineri Journal of Applied Physics 102 (11), 2007 | 189 | 2007 |
| Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum I Deretzis, A Alberti, G Pellegrino, E Smecca, F Giannazzo, N Sakai, ... Applied Physics Letters 106 (13), 2015 | 188 | 2015 |
| Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ... Applied Surface Science 301, 9-18, 2014 | 175 | 2014 |
| Challenges for energy efficient wide band gap semiconductor power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ... physica status solidi (a) 211 (9), 2063-2071, 2014 | 137 | 2014 |
| Screening length and quantum capacitance in graphene by scanning probe microscopy F Giannazzo, S Sonde, V Raineri, E Rimini Nano letters 9 (1), 23-29, 2009 | 136 | 2009 |
| Mapping the density of scattering centers limiting the electron mean free path in graphene F Giannazzo, S Sonde, RL Nigro, E Rimini, V Raineri Nano letters 11 (11), 4612-4618, 2011 | 124 | 2011 |
| Anchoring molecular magnets on the Si (100) surface GG Condorelli, A Motta, IL Fragalà, F Giannazzo, V Raineri, A Caneschi, ... Angewandte Chemie International Edition 43 (31), 4081-4084, 2004 | 123 | 2004 |
| Surface and interface issues in wide band gap semiconductor electronics F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri Applied Surface Science 256 (19), 5727-5735, 2010 | 122 | 2010 |
| Electrical properties of the graphene/ (0001) interface probed by scanning current spectroscopy S Sonde, F Giannazzo, V Raineri, R Yakimova, JR Huntzinger, A Tiberj, ... Physical Review B 80 (24), 241406, 2009 | 120 | 2009 |
| Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC F Giannazzo, I Deretzis, A La Magna, F Roccaforte, R Yakimova Physical Review B 86 (23), 235422, 2012 | 116 | 2012 |
| XPS and AFM characterization of the enzyme glucose oxidase immobilized on SiO2 surfaces S Libertino, F Giannazzo, V Aiello, A Scandurra, F Sinatra, M Renis, ... Langmuir 24 (5), 1965-1972, 2008 | 106 | 2008 |
| Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum A Alberti, I Deretzis, G Pellegrino, C Bongiorno, E Smecca, G Mannino, ... ChemPhysChem 16 (14), 3064-3071, 2015 | 99 | 2015 |
| Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review P Fiorenza, F Giannazzo, F Roccaforte Energies 12 (12), 2310, 2019 | 96 | 2019 |
| SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte Applied Physics Letters 103 (15), 2013 | 95 | 2013 |
| Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy G Nicotra, QM Ramasse, I Deretzis, A La Magna, C Spinella, F Giannazzo Acs Nano 7 (4), 3045-3052, 2013 | 93 | 2013 |
| Vertical transistors based on 2D materials: Status and prospects F Giannazzo, G Greco, F Roccaforte, SS Sonde Crystals 8 (2), 70, 2018 | 91 | 2018 |
| Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ... ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017 | 91 | 2017 |
| Nanoscale transport properties at silicon carbide interfaces F Roccaforte, F Giannazzo, V Raineri Journal of Physics D: Applied Physics 43 (22), 223001, 2010 | 90 | 2010 |
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi在 imm.cnr.it 的电子邮件经过验证
