| MgxZn1− xO-based photodetectors covering the whole solar-blind spectrum range ZG Ju, CX Shan, DY Jiang, JY Zhang, B Yao, DX Zhao, DZ Shen, XW Fan Applied Physics Letters 93 (17), 2008 | 204 | 2008 |
| Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices LK Wang, ZG Ju, JY Zhang, J Zheng, DZ Shen, B Yao, DX Zhao, ... Applied Physics Letters 95 (13), 2009 | 143 | 2009 |
| InGaN/GaN light-emitting diode with a polarization tunnel junction ZH Zhang, S Tiam Tan, Z Kyaw, Y Ji, W Liu, Z Ju, N Hasanov, X Wei Sun, ... Applied Physics Letters 102 (19), 2013 | 125 | 2013 |
| Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers ZH Zhang, W Liu, Z Ju, S Tiam Tan, Y Ji, Z Kyaw, X Zhang, L Wang, ... Applied Physics Letters 104 (24), 2014 | 84 | 2014 |
| On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes ZH Zhang, ST Tan, Z Ju, W Liu, Y Ji, Z Kyaw, Y Dikme, XW Sun, HV Demir Journal of Display Technology 9 (4), 226-233, 2012 | 64 | 2012 |
| Two-carrier transport and ferromagnetism in FeSe thin films XJ Wu, ZZ Zhang, JY Zhang, BH Li, ZG Ju, YM Lu, BS Li, DZ Shen Journal of Applied Physics 103 (11), 2008 | 63 | 2008 |
| Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer ZH Zhang, ST Tan, W Liu, Z Ju, K Zheng, Z Kyaw, Y Ji, N Hasanov, ... Optics express 21 (4), 4958-4969, 2013 | 61 | 2013 |
| MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response LK Wang, ZG Ju, CX Shan, J Zheng, DZ Shen, B Yao, DX Zhao, ZZ Zhang, ... Solid state communications 149 (45-46), 2021-2023, 2009 | 59 | 2009 |
| Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, ZB Kyaw, XL Zhang, SP Lu, ... Applied Physics Letters 102 (24), 2013 | 50 | 2013 |
| Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering ZH Zhang, Z Ju, W Liu, ST Tan, Y Ji, Z Kyaw, X Zhang, N Hasanov, ... Optics letters 39 (8), 2483-2486, 2014 | 47 | 2014 |
| Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier Y Ji, ZH Zhang, ST Tan, ZG Ju, Z Kyaw, N Hasanov, W Liu, XW Sun, ... Optics letters 38 (2), 202-204, 2013 | 47 | 2013 |
| InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination ZH Zhang, W Liu, Z Ju, ST Tan, Y Ji, Z Kyaw, X Zhang, L Wang, XW Sun, ... Applied Physics Letters 105 (3), 2014 | 46 | 2014 |
| On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer ZG Ju, ST Tan, ZH Zhang, Y Ji, Z Kyaw, Y Dikme, XW Sun, HV Demir Applied Physics Letters 100 (12), 2012 | 46 | 2012 |
| Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency ZH Zhang, W Liu, Z Ju, S Tiam Tan, Y Ji, X Zhang, L Wang, Z Kyaw, ... Applied Physics Letters 104 (25), 2014 | 41 | 2014 |
| Advantages of the blue InGaN/GaN light-emitting diodes with an AlGaN/GaN/AlGaN quantum well structured electron blocking layer ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, Z Kyaw, XL Zhang, SP Lu, ... Acs Photonics 1 (4), 377-381, 2014 | 41 | 2014 |
| p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas ZH Zhang, S Tiam Tan, Z Kyaw, W Liu, Y Ji, Z Ju, X Zhang, X Wei Sun, ... Applied Physics Letters 103 (26), 2013 | 41 | 2013 |
| White light emission from CdTe quantum dots decorated n-ZnO nanorods/p-GaN light-emitting diodes J Dai, Y Ji, CX Xu, XW Sun, KS Leck, ZG Ju Applied Physics Letters 99 (6), 2011 | 41 | 2011 |
| Growth of FeSe on general substrates by metal-organic chemical vapor deposition and the application in magnet tunnel junction devices XJ Wu, ZZ Zhang, JY Zhang, ZG Ju, BH Li, BS Li, CX Shan, DX Zhao, ... Thin Solid Films 516 (18), 6116-6119, 2008 | 38 | 2008 |
| On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes ZH Zhang, W Liu, ST Tan, Z Ju, Y Ji, Z Kyaw, X Zhang, N Hasanov, B Zhu, ... Optics Express 22 (103), A779-A789, 2014 | 37 | 2014 |
| On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer ZH Zhang, Y Ji, W Liu, S Tiam Tan, Z Kyaw, Z Ju, X Zhang, N Hasanov, ... Applied Physics Letters 104 (7), 2014 | 37 | 2014 |
