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| Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics K Čičo, K Hušeková, M Ťapajna, D Gregušová, R Stoklas, J Kuzmík, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 40 | 2011 |
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