标题/作者	年份
Liquid metals: fundamentals and applications in chemistry T Daeneke, K Khoshmanesh, N Mahmood, IA De Castro, D Esrafilzadeh, ... Chemical Society Reviews 47 (11), 4073-4111	2018
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim Journal of Applied Physics 124 (22)	2018
Review of Ga2O3-based optoelectronic devices D Guo, Q Guo, Z Chen, Z Wu, P Li, W Tang Materials Today Physics 11, 100157	2019
2300V reverse breakdown voltage Ga2O3 Schottky rectifiers J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata ECS Journal of Solid State Science and Technology 7 (5), Q92	2018
First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials S Poncé, W Li, S Reichardt, F Giustino Reports on Progress in Physics 83 (3), 036501	2020
Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2/$ R_ {\text {on, sp}} $ of up to 0.95 GW/cm 2 W Li, K Nomoto, Z Hu, D Jena, HG Xing IEEE Electron Device Letters 41 (1), 107-110	2019
An overview of the ultrawide bandgap Ga 2 O 3 semiconductor-based Schottky barrier diode for power electronics application HW Xue, QM He, GZ Jian, SB Long, T Pang, M Liu Nanoscale research letters 13, 1-13	2018
Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov Journal of Materials Chemistry C 7 (1), 10-24	2019
Review—Theory and characterization of doping and defects in β-Ga2O3 MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194	2019
Acceptor doping of β-Ga2O3 by Mg and N ion implantations MH Wong, CH Lin, A Kuramata, S Yamakoshi, H Murakami, Y Kumagai, ... Applied Physics Letters 113 (10)	2018
Current Aperture Vertical $\beta $-Ga 2 O 3 MOSFETs Fabricated by N-and Si-Ion Implantation Doping MH Wong, K Goto, H Murakami, Y Kumagai, M Higashiwaki IEEE Electron Device Letters 40 (3), 431-434	2018
Vertical Ga 2 O 3 Schottky barrier diodes with small-angle beveled field plates: A Baliga’s figure-of-merit of 0.6 GW/cm 2 N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ... IEEE Electron Device Letters 40 (9), 1399-1402	2019
Ultra-wide bandgap semiconductor Ga2O3 power diodes J Zhang, P Dong, K Dang, Y Zhang, Q Yan, H Xiang, J Su, Z Liu, M Si, ... Nature communications 13 (1), 3900	2022
1-kV Sputtered p-NiO/n-Ga 2 O 3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu $ A/cm 2 X Lu, X Zhou, H Jiang, KW Ng, Z Chen, Y Pei, KM Lau, G Wang IEEE Electron Device Letters 41 (3), 449-452	2020
Source-Field-Plated $\beta $-Ga 2 O 3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm 2 Y Lv, X Zhou, S Long, X Song, Y Wang, S Liang, Z He, T Han, X Tan, ... IEEE Electron Device Letters 40 (1), 83-86	2018
Lateral 1.8 kV $\beta $-Ga 2 O 3 MOSFET With 155 MW/cm 2 Power Figure of Merit K Tetzner, EB Treidel, O Hilt, A Popp, SB Anooz, G Wagner, A Thies, ... IEEE Electron Device Letters 40 (9), 1503-1506	2019
Gallium Oxide: Materials Properties, Crystal Growth, and Devices M Higashiwaki, S Fujita Springer Nature	2020
2.32 kV breakdown voltage lateral β-Ga2O3 MOSFETs with source-connected field plate JK Mun, K Cho, W Chang, HW Jung, J Do ECS Journal of Solid State Science and Technology 8 (7), Q3079	2019
Review of gallium oxide based field-effect transistors and Schottky barrier diodes Z Liu, PG Li, YS Zhi, XL Wang, XL Chu, WH Tang Chinese Physics B 28 (1), 017105	2019
Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces Z Cheng, L Yates, J Shi, MJ Tadjer, KD Hobart, S Graham Apl Materials 7 (3)	2019

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