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h5 指数:61
h5 中位数:80

h5 指数是指在过去整整 5 年中所发表文章的 h 指数。h 指在 2018-2022 年间发表的 h 篇文章每篇至少都被引用过 h 次的最大值。隐藏

出版物的 h5 中位数，是指出版物的 h5 指数所涵盖的所有文章获得的引用次数的中位值。隐藏

标题/作者	引用次数	年份
GaN-on-Si Power Technology: Devices and Applications KJ Chen, O Häberlen, A Lidow, C lin Tsai, T Ueda, Y Uemoto, Y Wu IEEE Transactions on Electron Devices 64 (3), 779-795	756	2017
Phase-Change Memory—Towards a Storage-Class Memory SW Fong, CM Neumann, HSP Wong IEEE Transactions on Electron Devices 64 (11), 4374-4385	231	2017
Superjunction Power Devices, History, Development, and Future Prospects F Udrea, G Deboy, T Fujihira IEEE Transactions on Electron Devices 64 (3), 713-727	220	2017
Current Status and Opportunities of Organic Thin-Film Transistor Technologies X Guo, Y Xu, S Ogier, TN Ng, M Caironi, A Perinot, L Li, J Zhao, W Tang, ... IEEE Transactions on Electron Devices 64 (5), 1906-1921	189	2017
IGBT History, State-of-the-Art, and Future Prospects N Iwamuro, T Laska IEEE Transactions on Electron Devices 64 (3), 741-752	186	2017
A Review of Flexible OLEDs Toward Highly Durable Unusual Displays SM Lee, JH Kwon, S Kwon, KC Choi IEEE Transactions on Electron Devices 64 (5), 1922-1931	174	2017
3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications GC Adam, BD Hoskins, M Prezioso, F Merrikh-Bayat, B Chakrabarti, ... IEEE Transactions on Electron Devices 64 (1), 312-318	171	2017
Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ... IEEE Transactions on Electron Devices 65 (6), 2461-2469	167	2018
“Leaky Dielectric” Model for the Suppression of Dynamic $ R_ {\mathrm {ON}} $ in Carbon-Doped AlGaN/GaN HEMTs MJ Uren, S Karboyan, I Chatterjee, A Pooth, P Moens, A Banerjee, ... IEEE Transactions on Electron Devices 64 (7), 2826-2834	150	2017
The Trench Power MOSFET: Part I—History, Technology, and Prospects RK Williams, MN Darwish, RA Blanchard, R Siemieniec, P Rutter, ... IEEE Transactions on Electron Devices 64 (3), 674-691	137	2017
Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node D Jang, D Yakimets, G Eneman, P Schuddinck, MG Bardon, P Raghavan, ... IEEE Transactions on Electron Devices 64 (6), 2707-2713	135	2017
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO 2/HfO 2 Stacked Gate-Oxide Structure S Kumar, E Goel, K Singh, B Singh, PK Singh, K Baral, S Jit IEEE Transactions on Electron Devices 64 (3), 960-968	134	2017
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 65 (9), 3769-3774	127	2018
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ... IEEE Transactions on Electron Devices 65 (1), 45-50	122	2017
Performance of a Nano-CNC Machined 220-GHz Traveling Wave Tube Amplifier A Baig, D Gamzina, T Kimura, J Atkinson, C Domier, B Popovic, L Himes, ... IEEE Transactions on Electron Devices 64 (5), 2390-2397	115	2017
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors TP Chow, I Omura, M Higashiwaki, H Kawarada, V Pala IEEE Transactions on Electron Devices 64 (3), 856-873	112	2017
The Past, the Present, and the Future of Ferroelectric Memories T Mikolajick, U Schroeder, S Slesazeck IEEE Transactions on Electron Devices 67 (4), 1434-1443	112	2020
A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection D Singh, S Pandey, K Nigam, D Sharma, DS Yadav, P Kondekar IEEE Transactions on Electron Devices 64 (1), 271-278	104	2017
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs L Sayadi, G Iannaccone, S Sicre, O Häberlen, G Curatola IEEE Transactions on Electron Devices 65 (6), 2454-2460	101	2018
Fully Inkjet-Printed Photodetector Using a Graphene/Perovskite/Graphene Heterostructure AM Alamri, S Leung, M Vaseem, A Shamim, JH He IEEE Transactions on Electron Devices 66 (6), 2657-2661	93	2019

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