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引用“”的文章Cryogenic MOS Transistor Model

标题/作者	年份
Theoretical limit of low temperature subthreshold swing in field-effect transistors A Beckers, F Jazaeri, C Enz IEEE Electron Device Letters 41 (2), 276-279	2019
Scaling silicon-based quantum computing using CMOS technology MF Gonzalez-Zalba, S De Franceschi, E Charbon, T Meunier, M Vinet, ... Nature Electronics 4 (12), 872-884	2021
Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ... IEEE Electron Device Letters 40 (5), 784-787	2019
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz Solid-State Electronics 159, 106-115	2019
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics F Jazaeri, A Beckers, A Tajalli, JM Sallese 2019 MIXDES-26th International Conference" Mixed Design of Integrated …	2019
Physical model of low-temperature to cryogenic threshold voltage in MOSFETs A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz IEEE Journal of the Electron Devices Society 8, 780-788	2020
Cryogenic MOSFET threshold voltage model A Beckers, F Jazaeri, C Enz ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …	2019
Self-heating effect in FDSOI transistors down to cryogenic operation at 4.2 K K Triantopoulos, M Cassé, S Barraud, S Haendler, E Vincent, M Vinet, ... IEEE Transactions on Electron Devices 66 (8), 3498-3505	2019
Challenges in scaling-up the control interface of a quantum computer DJ Reilly 2019 IEEE International Electron Devices Meeting (IEDM), 31.7. 1-31.7. 6	2019
Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz 2018 Joint International EUROSOI Workshop and International Conference on …	2018
Characterization and modeling of mismatch in cryo-CMOS M Babaie, E Charbon, A Vladimirescu, F Sebastiano IEEE Journal of the Electron Devices Society 8, 263-273	2020
A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics A Ruffino, TY Yang, J Michniewicz, Y Peng, E Charbon, ... Nature Electronics 5 (1), 53-59	2022
Subthreshold mismatch in nanometer CMOS at cryogenic temperatures PAT Hart, M Babaie, E Charbon, A Vladimirescu, F Sebastiano IEEE Journal of the Electron Devices Society 8, 797-806	2020
Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures G Pahwa, P Kushwaha, A Dasgupta, S Salahuddin, C Hu IEEE Transactions on Electron Devices 68 (9), 4223-4230	2021
28 nm FDSOI analog and RF figures of merit at N2 cryogenic temperatures BK Esfeh, N Planes, M Haond, JP Raskin, D Flandre, V Kilchytska Solid-State Electronics 159, 77-82	2019
A wideband low-power cryogenic CMOS circulator for quantum applications A Ruffino, Y Peng, F Sebastiano, M Babaie, E Charbon IEEE Journal of Solid-State Circuits 55 (5), 1224-1238	2020
Cryo-CMOS compact modeling C Enz, A Beckers, F Jazaeri 2020 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4	2020
Subthreshold swing saturation of nanoscale MOSFETs due to source-to-drain tunneling at cryogenic temperatures KH Kao, TR Wu, HL Chen, WJ Lee, NY Chen, WCY Ma, CJ Su, YJ Lee IEEE Electron Device Letters 41 (9), 1296-1299	2020
Inflection phenomenon in cryogenic MOSFET behavior A Beckers, F Jazaeri, C Enz IEEE Transactions on Electron Devices 67 (3), 1357-1360	2020
Cryogenic characterization of 16 nm FinFET technology for quantum computing HC Han, F Jazaeri, A D'Amico, A Baschirotto, E Charbon, C Enz ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), 71-74	2021

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