标题/作者	年份
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim Journal of Applied Physics 124 (22)	2018
Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, BD Sierawski, ... IEEE Transactions on Nuclear Science 67 (1), 22-28	2019
Radiation damage in wide and ultra-wide bandgap semiconductors SJ Pearton, A Aitkaliyeva, M Xian, F Ren, A Khachatrian, A Ildefonso, ... ECS Journal of Solid State Science and Technology 10 (5), 055008	2021
A simulation-based comparison between Si and SiC MOSFETs on single-event burnout susceptibility X Zhou, Y Jia, D Hu, Y Wu IEEE Transactions on Electron Devices 66 (6), 2551-2556	2019
Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part I C Abbate, G Busatto, D Tedesco, A Sanseverino, L Silvestrin, F Velardi, ... IEEE Transactions on Electron Devices 66 (10), 4235-4242	2019
Estimating terrestrial neutron-induced SEB cross sections and FIT rates for high-voltage SiC power MOSFETs DR Ball, BD Sierawski, KF Galloway, RA Johnson, ML Alles, AL Sternberg, ... IEEE Transactions on Nuclear Science 66 (1), 337-343	2018
Heavy-ion microbeam studies of single-event leakage current mechanism in SiC VD-MOSFETs C Martinella, T Ziemann, R Stark, A Tsibizov, KO Voss, RG Alia, Y Kadi, ... IEEE Transactions on Nuclear Science 67 (7), 1381-1389	2020
Impact of varied buffer layer designs on single-event response of 1.2-kV SiC power MOSFETs J Lu, J Liu, X Tian, H Chen, Y Tang, Y Bai, C Li, X Liu IEEE Transactions on Electron Devices 67 (9), 3698-3704	2020
Current transport mechanism for heavy-ion degraded SiC MOSFETs C Martinella, R Stark, T Ziemann, RG Alía, Y Kadi, U Grossner, ... IEEE Transactions on Nuclear Science 66 (7), 1702-1709	2019
Enhanced charge collection in SiC power MOSFETs demonstrated by pulse-laser two-photon absorption SEE experiments RA Johnson, AF Witulski, DR Ball, KF Galloway, AL Sternberg, E Zhang, ... IEEE Transactions on Nuclear Science 66 (7), 1694-1701	2019
Single-event burnout hardness for the 4H-SiC trench-gate MOSFETs based on the multi-island buffer layer Y Wang, M Lin, XJ Li, X Wu, JQ Yang, MT Bao, CH Yu, F Cao IEEE Transactions on Electron Devices 66 (10), 4264-4272	2019
Single-event effects in SiC double-trench MOSFETs X Zhou, Y Tang, Y Jia, D Hu, Y Wu, T Xia, H Gong, H Pang IEEE Transactions on Nuclear Science 66 (11), 2312-2318	2019
Predicting cosmic ray-induced failures in silicon carbide power devices A Akturk, JM McGarrity, N Goldsman, DJ Lichtenwalner, B Hull, D Grider, ... IEEE Transactions on Nuclear Science 66 (7), 1828-1832	2019
Effects of breakdown voltage on single-event burnout tolerance of high-voltage SiC power MOSFETs DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, AF Witulski, ... IEEE Transactions on Nuclear Science 68 (7), 1430-1435	2021
Unifying concepts for ion-induced leakage current degradation in silicon carbide Schottky power diodes RA Johnson, AF Witulski, DR Ball, KF Galloway, AL Sternberg, RA Reed, ... IEEE Transactions on Nuclear Science 67 (1), 135-139	2019
Ion-induced mesoplasma formation and thermal destruction in 4H-SiC power MOSFET devices JA McPherson, CW Hitchcock, TP Chow, W Ji, AA Woodworth IEEE Transactions on Nuclear Science 68 (5), 651-658	2021
Radiation effects in algan/gan hemts DM Fleetwood, EX Zhang, RD Schrimpf, ST Pantelides IEEE Transactions on Nuclear Science 69 (5), 1105-1119	2022
Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET K Niskanen, AD Touboul, RC Germanicus, A Michez, A Javanainen, ... IEEE Transactions on Nuclear Science 67 (7), 1365-1373	2020
Single-event burnout hardening method and evaluation in SiC power MOSFET devices JX Bi, Y Wang, X Wu, X Li, J Yang, MT Bao, F Cao IEEE Transactions on Electron Devices 67 (10), 4340-4345	2020
Mechanisms of heavy ion-induced single event burnout in 4H-SiC power MOSFETs JA McPherson, CW Hitchcock, TP Chow, W Ji, AA Woodworth Materials Science Forum 1004, 889-896	2020

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