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h5 指数:61
h5 中位数:78

h5 指数是指在过去整整 5 年中所发表文章的 h 指数。h 指在 2018-2022 年间发表的 h 篇文章每篇至少都被引用过 h 次的最大值。隐藏

出版物的 h5 中位数，是指出版物的 h5 指数所涵盖的所有文章获得的引用次数的中位值。隐藏

标题/作者	引用次数	年份
Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ... IEEE Transactions on Electron Devices 65 (6), 2461-2469	269	2018
The Past, the Present, and the Future of Ferroelectric Memories T Mikolajick, U Schroeder, S Slesazeck IEEE Transactions on Electron Devices 67 (4), 1434-1443	216	2020
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 65 (9), 3769-3774	194	2018
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ... IEEE Transactions on Electron Devices 65 (1), 45-50	166	2018
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs L Sayadi, G Iannaccone, S Sicre, O Häberlen, G Curatola IEEE Transactions on Electron Devices 65 (6), 2454-2460	156	2018
ReRAM: History, Status, and Future Y Chen IEEE Transactions on Electron Devices 67 (4), 1420-1433	152	2020
Cryogenic MOS Transistor Model A Beckers, F Jazaeri, C Enz IEEE Transactions on Electron Devices 65 (9), 3617-3625	128	2018
Ferroelectric FETs With 20-nm-Thick HfO 2 Layer for Large Memory Window and High Performance H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck IEEE Transactions on Electron Devices 66 (9), 3828-3833	126	2019
Fully Inkjet-Printed Photodetector Using a Graphene/Perovskite/Graphene Heterostructure AM Alamri, S Leung, M Vaseem, A Shamim, JH He IEEE Transactions on Electron Devices 66 (6), 2657-2661	116	2019
Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior G Pahwa, A Agarwal, YS Chauhan IEEE Transactions on Electron Devices 65 (11), 5130-5136	115	2018
Physical Insights on Negative Capacitance Transistors in Nonhysteresis and Hysteresis Regimes: MFMIS Versus MFIS Structures G Pahwa, T Dutta, A Agarwal, YS Chauhan IEEE Transactions on Electron Devices 65 (3), 867-873	113	2018
3-D NAND Technology Achievements and Future Scaling Perspectives A Goda IEEE Transactions on Electron Devices 67 (4), 1373-1381	108	2020
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger IEEE Transactions on Electron Devices 66 (11), 4604-4616	107	2019
14-nm FinFET Technology for Analog and RF Applications J Singh, J Ciavatti, K Sundaram, JS Wong, A Bandyopadhyay, X Zhang, ... IEEE Transactions on Electron Devices 65 (1), 31-37	106	2018
BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation N Parihar, N Goel, S Mukhopadhyay, S Mahapatra IEEE Transactions on Electron Devices 65 (2), 392-403	104	2018
Magnetoresistive Random Access Memory: Present and Future S Ikegawa, FB Mancoff, J Janesky, S Aggarwal IEEE Transactions on Electron Devices 67 (4), 1407-1419	103	2020
High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS S Yin, X Sun, S Yu, JS Seo IEEE Transactions on Electron Devices 67 (10), 4185-4192	96	2020
ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ... IEEE Transactions on Electron Devices 66 (1), 80-86	96	2018
Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices S Huang, X Liu, X Wang, X Kang, J Zhang, J Fan, J Shi, K Wei, Y Zheng, ... IEEE Transactions on Electron Devices 65 (1), 207-214	91	2018
Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2/TiO x Bilayer ReRAM Cells A Hardtdegen, C La Torre, F Cüppers, S Menzel, R Waser, ... IEEE Transactions on Electron Devices 65 (8), 3229-3236	91	2018

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