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h5 指数:70
h5 中位数:91

h5 指数是指在过去整整 5 年中所发表文章的 h 指数。h 指在 2018-2022 年间发表的 h 篇文章每篇至少都被引用过 h 次的最大值。隐藏

出版物的 h5 中位数，是指出版物的 h5 指数所涵盖的所有文章获得的引用次数的中位值。隐藏

标题/作者	引用次数	年份
Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage> 1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ... IEEE Electron Device Letters 39 (6), 869-872	255	2018
An Artificial Neuron Based on a Threshold Switching Memristor X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ... IEEE Electron Device Letters 39 (2), 308-311	235	2018
Recessed-Gate Enhancement-Mode beta-Ga2O3 MOSFETs KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ... IEEE Electron Device Letters 39 (1), 67-70	182	2018
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga 2 O 3 MOSFETs K Zeng, A Vaidya, U Singisetti IEEE Electron Device Letters 39 (9), 1385-1388	181	2018
Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2/$ R_ {\text {on, sp}} $ of up to 0.95 GW/cm 2 W Li, K Nomoto, Z Hu, D Jena, HG Xing IEEE Electron Device Letters 41 (1), 107-110	173	2019
A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation N Gong, TP Ma IEEE Electron Device Letters 39 (1), 15-18	156	2018
Field-Plated Lateral $\beta $-Ga 2 O 3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm 2 Z Hu, H Zhou, Q Feng, J Zhang, C Zhang, K Dang, Y Cai, Z Feng, Y Gao, ... IEEE Electron Device Letters 39 (10), 1564-1567	152	2018
Field-Plated Lateral Ga 2 O 3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage S Sharma, K Zeng, S Saha, U Singisetti IEEE Electron Device Letters 41 (6), 836-839	150	2020
Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, RD Reis, ... IEEE Electron Device Letters 39 (2), 300-303	145	2018
Current Aperture Vertical $\beta $-Ga 2 O 3 MOSFETs Fabricated by N-and Si-Ion Implantation Doping MH Wong, K Goto, H Murakami, Y Kumagai, M Higashiwaki IEEE Electron Device Letters 40 (3), 431-434	142	2018
Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2 N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ... IEEE Electron Device Letters 40 (9), 1399-1402	139	2019
$\beta $-Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055	129	2019
Vertical Ga 2 O 3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation CH Lin, Y Yuda, MH Wong, M Sato, N Takekawa, K Konishi, T Watahiki, ... IEEE Electron Device Letters 40 (9), 1487-1490	128	2019
High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation Z Wang, L Zhang, M Wang, Z Wang, D Zhu, Y Zhang, W Zhao IEEE Electron Device Letters 39 (3), 343-346	126	2018
Delta Doped $\beta $-Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ... IEEE Electron Device Letters 39 (4), 568-571	124	2018
Effects of Capping Electrode on Ferroelectric Properties of Hf 0.5 Zr 0.5 O 2 Thin Films R Cao, Y Wang, S Zhao, Y Yang, X Zhao, W Wang, X Zhang, H Lv, Q Liu, ... IEEE Electron Device Letters 39 (8), 1207-1210	119	2018
First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications M Seo, MH Kang, SB Jeon, H Bae, J Hur, BC Jang, S Yun, S Cho, WK Kim, ... IEEE Electron Device Letters 39 (9), 1445-1448	117	2018
Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ... IEEE Electron Device Letters 40 (1), 75-78	115	2018
1-kV Sputtered p-NiO/n-Ga 2 O 3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu $ A/cm 2 X Lu, X Zhou, H Jiang, KW Ng, Z Chen, Y Pei, KM Lau, G Wang IEEE Electron Device Letters 41 (3), 449-452	109	2020
Source-Field-Plated $\beta $-Ga 2 O 3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm 2 Y Lv, X Zhou, S Long, X Song, Y Wang, S Liang, Z He, T Han, X Tan, ... IEEE Electron Device Letters 40 (1), 83-86	107	2018

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