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h5 指数:73
h5 中位数:106

h5 指数是指在过去整整 5 年中所发表文章的 h 指数。h 指在 2017-2021 年间发表的 h 篇文章每篇至少都被引用过 h 次的最大值。隐藏

出版物的 h5 中位数，是指出版物的 h5 指数所涵盖的所有文章获得的引用次数的中位值。隐藏

标题/作者	引用次数	年份
The Computational 2D Materials Database: high-throughput modeling and discovery of atomically thin crystals S Haastrup, M Strange, M Pandey, T Deilmann, PS Schmidt, NF Hinsche, ... 2D Materials 5 (4), 042002	492	2018
On the origin of magnetic anisotropy in two dimensional CrI3 JL Lado, J Fernández-Rossier 2D Materials 4 (3), 035002	425	2017
Few-layer antimonene decorated microfiber: ultra-short pulse generation and all-optical thresholding with enhanced long term stability Y Song, Z Liang, X Jiang, Y Chen, Z Li, L Lu, Y Ge, K Wang, J Zheng, S Lu, ... 2D Materials 4 (4), 045010	255	2017
Two-dimensional multiferroics in monolayer group IV monochalcogenides H Wang, X Qian 2D Materials 4 (1), 015042	240	2017
Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers OA Ajayi, JV Ardelean, GD Shepard, J Wang, A Antony, T Taniguchi, ... 2D Materials 4 (3), 031011	237	2017
Production and processing of graphene and related materials C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ... 2D Materials 7 (2), 022001	215	2020
Electrical percolation in graphene–polymer composites AJ Marsden, DG Papageorgiou, C Vallés, A Liscio, V Palermo, MA Bissett, ... 2D Materials 5 (3), 032003	199	2018
The rising star of 2D black phosphorus beyond graphene: synthesis, properties and electronic applications P Chen, N Li, X Chen, WJ Ong, X Zhao 2D Materials 5 (1), 014002	186	2017
Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides MR Molas, C Faugeras, AO Slobodeniuk, K Nogajewski, M Bartos, ... 2D Materials 4 (2), 021003	186	2017
Hysteresis in the transfer characteristics of MoS2 transistors A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo, G Luongo, T Foller, ... 2D Materials 5 (1), 015014	182	2017
Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors X Zhou, N Zhou, C Li, H Song, Q Zhang, X Hu, L Gan, H Li, J Lü, J Luo, ... 2D Materials 4 (2), 025048	170	2017
Calculating excitons, plasmons, and quasiparticles in 2D materials and van der Waals heterostructures KS Thygesen 2D Materials 4 (2), 022004	169	2017
Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects MM Otrokov, TV Menshchikova, MG Vergniory, IP Rusinov, ... 2D Materials 4 (2), 025082	168	2017
Disentangling contributions of point and line defects in the Raman spectra of graphene-related materials LG Cançado, MG da Silva, EHM Ferreira, F Hof, K Kampioti, K Huang, ... 2D Materials 4 (2), 025039	162	2017
On the organization and thermal behavior of functional groups on Ti3C2 MXene surfaces in vacuum I Persson, LÅ Näslund, J Halim, MW Barsoum, V Darakchieva, J Palisaitis, ... 2D Materials 5 (1), 015002	158	2017
A roadmap for electronic grade 2D materials N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ... 2D Materials 6 (2), 022001	152	2019
Electric field effect in multilayer Cr2Ge2Te6: a ferromagnetic 2D material W Xing, Y Chen, PM Odenthal, X Zhang, W Yuan, T Su, Q Song, T Wang, ... 2D Materials 4 (2), 024009	149	2017
Proximity induced room temperature ferromagnetism in graphene probed with spin currents JC Leutenantsmeyer, AA Kaverzin, M Wojtaszek, BJ van Wees 2D Materials 4 (1), 014001	142	2017
Large area planar stanene epitaxially grown on Ag (1 1 1) J Yuhara, Y Fujii, K Nishino, N Isobe, M Nakatake, L Xian, A Rubio, ... 2D Materials 5 (2), 025002	138	2018
A light-stimulated synaptic device based on graphene hybrid phototransistor S Qin, F Wang, Y Liu, Q Wan, X Wang, Y Xu, Y Shi, X Wang, R Zhang 2D Materials 4 (3), 035022	137	2017

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