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h5 指数:60
h5 中位数:85

h5 指数是指在过去整整 5 年中所发表文章的 h 指数。h 指在 2018-2022 年间发表的 h 篇文章每篇至少都被引用过 h 次的最大值。隐藏

出版物的 h5 中位数，是指出版物的 h5 指数所涵盖的所有文章获得的引用次数的中位值。隐藏

#16 Condensed Matter Physics & Semiconductors

标题/作者	引用次数	年份
The Computational 2D Materials Database: high-throughput modeling and discovery of atomically thin crystals S Haastrup, M Strange, M Pandey, T Deilmann, PS Schmidt, NF Hinsche, ... 2D Materials 5 (4), 042002	685	2018
Production and processing of graphene and related materials C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ... 2D Materials 7 (2), 022001	328	2020
Electrical percolation in graphene-polymer composites AJ Marsden, DG Papageorgiou, C Vallés, A Liscio, V Palermo, MA Bissett, ... 2D Materials 5 (3), 032003	267	2018
The rising star of 2D black phosphorus beyond graphene: synthesis, properties and electronic applications P Chen, N Li, X Chen, WJ Ong, X Zhao 2D Materials 5 (1), 014002	224	2018
On the organization and thermal behavior of functional groups on Ti 3 C 2 MXene surfaces in vacuum I Persson, LÅ Näslund, J Halim, MW Barsoum, V Darakchieva, J Palisaitis, ... 2D Materials 5 (1), 015002	218	2018
A roadmap for electronic grade 2D materials N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ... 2D Materials 6 (2), 022001	204	2019
Large area planar stanene epitaxially grown on Ag (1 1 1) J Yuhara, Y Fujii, K Nishino, N Isobe, M Nakatake, L Xian, A Rubio, ... 2D Materials 5 (2), 025002	169	2018
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge S Kang, D Lee, J Kim, A Capasso, HS Kang, JW Park, CH Lee, GH Lee 2D Materials 7 (2), 022003	161	2020
Direct determination of monolayer MoS 2 and WSe 2 exciton binding energies on insulating and metallic substrates S Park, N Mutz, T Schultz, S Blumstengel, A Han, A Aljarb, LJ Li, ... 2D Materials 5 (2), 025003	159	2018
Graphene related materials for thermal management Y Fu, J Hansson, Y Liu, S Chen, A Zehri, MK Samani, N Wang, Y Ni, ... 2D Materials 7 (1), 012001	153	2020
Dark and bright exciton formation, thermalization, and photoluminescence in monolayer transition metal dichalcogenides M Selig, G Berghäuser, M Richter, R Bratschitsch, A Knorr, E Malic 2D Materials 5 (3), 035017	147	2018
Superior structural, elastic and electronic properties of 2D titanium nitride MXenes over carbide MXenes: a comprehensive first principles study N Zhang, Y Hong, S Yazdanparast, MA Zaeem 2D Materials 5 (4), 045004	146	2018
Recent progress of the Computational 2D Materials Database (C2DB) MN Gjerding, A Taghizadeh, A Rasmussen, S Ali, F Bertoldo, T Deilmann, ... 2D Materials 8 (4), 044002	145	2021
Black phosphorus: ambient degradation and strategies for protection S Kuriakose, T Ahmed, S Balendhran, V Bansal, S Sriram, M Bhaskaran, ... 2D Materials 5 (3), 032001	122	2018
Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy NS Mueller, S Heeg, M Peña Alvarez, P Kusch, S Wasserroth, N Clark, ... 2D Materials 5 (1), 015016	119	2018
Water on graphene: review of recent progress C Melios, CE Giusca, V Panchal, O Kazakova 2D Materials 5 (2), 022001	118	2018
Tailoring the mechanical properties of 2D materials and heterostructures C Androulidakis, K Zhang, M Robertson, S Tawfick 2D Materials 5 (3), 032005	117	2018
Electrically tuneable nonlinear anomalous Hall effect in two-dimensional transition-metal dichalcogenides WTe2 and MoTe2 Y Zhang, J van den Brink, C Felser, B Yan 2D Materials 5 (4), 044001	116	2018
Antiferromagnetic ordering in van der Waals 2D magnetic material MnPS3 probed by Raman spectroscopy K Kim, SY Lim, J Kim, JU Lee, S Lee, P Kim, K Park, S Son, CH Park, ... 2D Materials 6 (4), 041001	113	2019
Brightened spin-triplet interlayer excitons and optical selection rules in van der Waals heterobilayers H Yu, GB Liu, W Yao 2D Materials 5 (3), 035021	101	2018

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