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h5 指数:35
h5 中位数:41

h5 指数是指在过去整整 5 年中所发表文章的 h 指数。h 指在 2018-2022 年间发表的 h 篇文章每篇至少都被引用过 h 次的最大值。隐藏

出版物的 h5 中位数，是指出版物的 h5 指数所涵盖的所有文章获得的引用次数的中位值。隐藏

#20 High Energy & Nuclear Physics

标题/作者	引用次数	年份
Needs, Trends, and Advances in Inorganic Scintillators C Dujardin, E Auffray, E Bourret-Courchesne, P Dorenbos, P Lecoq, ... IEEE Transactions on Nuclear Science 65 (8), 1977-1997	319	2018
Evolution of Total Ionizing Dose Effects in MOS Devices With Moore's Law Scaling DM Fleetwood IEEE Transactions on Nuclear Science 65 (8), 1465-1481	168	2018
Displacement Damage in Silicon Detectors for High Energy Physics M Moll IEEE Transactions on Nuclear Science 65 (8), 1561-1582	161	2018
Single-Event Burnout Mechanisms in SiC Power MOSFETs AF Witulski, DR Ball, KF Galloway, A Javanainen, JM Lauenstein, ... IEEE Transactions on Nuclear Science 65 (8), 1951-1955	97	2018
Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ... IEEE Transactions on Nuclear Science 65 (1), 164-174	86	2018
Selective Hardening for Neural Networks in FPGAs F Libano, B Wilson, J Anderson, MJ Wirthlin, C Cazzaniga, C Frost, ... IEEE Transactions on Nuclear Science 66 (1), 216-222	74	2018
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices AF Witulski, R Arslanbekov, A Raman, RD Schrimpf, AL Sternberg, ... IEEE Transactions on Nuclear Science 65 (1), 256-261	72	2018
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies DM Fleetwood IEEE Transactions on Nuclear Science 67 (7), 1216-1240	72	2020
LHC and HL-LHC: Present and Future Radiation Environment in the High-Luminosity Collision Points and RHA Implications R Garcia Alia, M Brugger, F Cerutti, S Danzeca, A Ferrari, S Gilardoni, ... IEEE Transactions on Nuclear Science 65 (1), 448-456	68	2018
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, BD Sierawski, ... IEEE Transactions on Nuclear Science 67 (1), 22-28	64	2019
Dosimetry Techniques and Radiation Test Facilities for Total Ionizing Dose Testing F Ravotti IEEE Transactions on Nuclear Science 65 (8), 1440-1464	64	2018
Performance of Perovskite CsPbBr 3 Single Crystal Detector for Gamma-Ray Detection L Pan, Y Feng, P Kandlakunta, J Huang, LR Cao IEEE Transactions on Nuclear Science 67 (2), 443-449	52	2020
Radiation Effects in a Post-Moore World DM Fleetwood IEEE Transactions on Nuclear Science 68 (5), 509-545	48	2021
VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO A Jamil, T Ziegler, P Hufschmidt, G Li, L Lupin-Jimenez, T Michel, ... IEEE Transactions on Nuclear Science 65 (11), 2823-2833	46	2018
Radiation Effects on Deep Submicrometer SRAM-Based FPGAs Under the CERN Mixed-Field Radiation Environment G Tsiligiannis, S Danzeca, RG Alía, A Infantino, A Lesea, M Brugger, ... IEEE Transactions on Nuclear Science 65 (8), 1511-1518	44	2018
Distributed Optical Fiber Radiation Sensing in the Proton Synchrotron Booster at CERN D Di Francesca, I Toccafondo, GL Vecchi, S Calderini, S Girard, A Alessi, ... IEEE Transactions on Nuclear Science 65 (8), 1639-1644	43	2018
Automatic and Real-Time Identification of Radionuclides in Gamma-Ray Spectra: A New Method Based on Convolutional Neural Network Trained With Synthetic Data Set G Daniel, F Ceraudo, O Limousin, D Maier, A Meuris IEEE Transactions on Nuclear Science 67 (4), 644-653	42	2020
Development of a Very Low-Noise Cryogenic Preamplifier for Large-Area SiPM Devices M D’Incecco, C Galbiati, GK Giovanetti, G Korga, X Li, A Mandarano, ... IEEE Transactions on Nuclear Science 65 (4), 1005-1011	41	2018
Improvement of the Time Resolution of Radiation Detectors Based on Gd 3 Al 2 Ga 3 O 12 Scintillators With SiPM Readout G Tamulaitis, A Vasil’ev, M Korzhik, A Mazzi, A Gola, S Nargelas, ... IEEE Transactions on Nuclear Science 66 (7), 1879-1888	40	2019
TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors Q Wang, H Liu, S Wang, S Chen IEEE Transactions on Nuclear Science 65 (8), 2250-2259	40	2018

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