Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
M Asif Khan, JN Kuznia, DT Olson, WJ Schaff… - Applied Physics …, 1994 - pubs.aip.org
We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature)
limited by the source series resistance. The device exhibited an excellent pinch‐off and a
low parasitic output conductance in the saturation regime. We measured the cutoff frequency
f T and the maximum oscillation frequency f max as 11 and 35 GHz, respectively. These
values are superior to the highest reported values for field effect transistors based on other …
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature)
limited by the source series resistance. The device exhibited an excellent pinch‐off and a
low parasitic output conductance in the saturation regime. We measured the cutoff frequency
f T and the maximum oscillation frequency f max as 11 and 35 GHz, respectively. These
values are superior to the highest reported values for field effect transistors based on other …
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